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Physical vapor deposition method for direct developing Nano metal wire in single component

A metal nanowire, metal technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of impure composition of nanowires, high cost, complex process and so on

Active Publication Date: 2008-07-16
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above-mentioned preparation method can prepare metal nanowires, the composition of the obtained nanowires is impure, mixed with a large amount of oxides, and the process is complicated and expensive.

Method used

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  • Physical vapor deposition method for direct developing Nano metal wire in single component
  • Physical vapor deposition method for direct developing Nano metal wire in single component
  • Physical vapor deposition method for direct developing Nano metal wire in single component

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1 (preparation molybdenum nanowire):

[0028] (1) Select a stainless steel sheet or an alumina sheet as the substrate, first ultrasonically clean it in acetone for 5 minutes, and then ultrasonically clean it in absolute ethanol for 5 minutes.

[0029] (2) Use a molybdenum boat (150×15×0.3mm) as a molybdenum source, place the molybdenum boat in a vacuum heating device (φ350×400mm), and place the substrate in the molybdenum boat. First pre-evacuate the vacuum heating device to ~5×10 -2 Torr, then feed argon as a shielding gas with a gas flow rate of 200 standard cubic centimeters per second, and simultaneously feed hydrogen gas with a gas flow rate of 100 standard cubic centimeters per second.

[0030] (3) Raise the temperature of the molybdenum boat, and finally raise the temperature to 1350°C, 1400°C, 1500°C and 1600°C respectively.

[0031] (4) Turn off the hydrogen gas, and the vacuum pressure is ~0.7 Torr at this time.

[0032] (5) Keep warm for 5 minut...

Embodiment 2

[0040] Embodiment 2 (preparation of tungsten nanowires):

[0041] (1) Choose a ceramic sheet as the substrate, first ultrasonically clean it in acetone for 5 minutes, and then ultrasonically clean it in absolute ethanol for 5 minutes.

[0042] (2) Use a tungsten boat (150×15×0.3mm) as a tungsten source, place the tungsten boat in a vacuum heating device (φ350×400mm), and place the substrate on the tungsten boat. First pre-evacuate the vacuum heating device to ~5×10 -2 Torr, then feed argon as a shielding gas with a gas flow rate of 200 standard cubic centimeters per second, and simultaneously feed hydrogen gas with a gas flow rate of 100 standard cubic centimeters per second.

[0043] (3) Raise the temperature of the tungsten boat, and finally raise the temperature to 1600°C respectively, and the temperature of the substrate is 1500°C to 1600°C.

[0044] (4) Turn off the hydrogen gas, and the vacuum pressure is ~0.7 Torr at this time.

[0045] (5) Keep warm for 120 minutes ...

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Abstract

A process for preparing the metallic (Mo or W) nanowire by physical vapor deposition method is disclosed. The analysis by XRD, SEM or TEM shows its single component, controllable height, high orderliness and perpendicularness to substrate.

Description

technical field [0001] The invention relates to a technology for directly preparing metal nanowires by a physical vapor deposition method. Background technique [0002] Metal materials such as molybdenum, tungsten, technetium, ruthenium, iridium, rhenium, and osmium have many excellent properties, such as high melting point, good mechanical properties at high temperatures, good chemical stability at high temperatures, and high electrical conductivity. It has a wide range of applications in electronic devices. In particular, one-dimensional metal nanowires will have a broad application space in future nanoelectronic components and their integrated circuits. For example, they can not only be used as constituent units of nanoelectronic components, but also as wires to connect nanoelectronic components devices to form circuit units. [0003] So far, there have been many reports on the methods of synthesizing metal nanowires, which mainly include the following: Method 1, metal ...

Claims

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Application Information

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IPC IPC(8): C23C14/24C23C14/14C23C14/02
Inventor 许宁生周军邓少芝陈军佘峻聪
Owner SUN YAT SEN UNIV