Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Equipment and process for preparing monocrystalline GaN film material

A gallium nitride single crystal and thin film material technology, which is applied in polycrystalline material growth, chemical instruments and methods, single crystal growth, etc., can solve the problem of difficulty in ensuring the quality of gallium nitride thin film, inability to mix raw materials and gases uniformly, and unreasonable structure and other problems, to achieve the effect of saving raw material gas, stable operation, uniform mixing and sufficient

Inactive Publication Date: 2008-08-20
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are deficiencies in this device and method. First, the structure of the device is unreasonable. The inlet pipes and openings for conveying different raw gases are all arranged in parallel and in the same direction, so that the mixing between multiple raw gases is only coaxial. The blending between the flowing air streams cannot fully mix the different raw materials uniformly, so it is difficult to ensure the quality of the prepared gallium nitride film; secondly, the realization of the method is not easy, because the inlet pipe is connected with the compressed gas that works in a vacuum state. Type MOVPE reaction tubes are connected, so it is not easy to adjust the length of the inner tube, especially when the pressure of one or more of the raw gas fluctuates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Equipment and process for preparing monocrystalline GaN film material
  • Equipment and process for preparing monocrystalline GaN film material
  • Equipment and process for preparing monocrystalline GaN film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017]Example 1: The preparation is completed according to the following steps: a) First, the sapphire substrate covered with aluminum nitride film and gallium nitride film is washed with acetone and ethanol in an ultrasonic bath for two consecutive times for 10 minutes, and then used Rinse with ionized water for 3 minutes and blow dry with purified nitrogen. Then, it is placed on the support frame in the vacuum chamber, and the vacuum chamber is placed under a nitrogen atmosphere, and the vacuum degree of the vacuum chamber under the nitrogen atmosphere is ≤1 atmospheric pressure; wherein the nitrogen gas flow rate is 600 sccm. b) Raise the temperature of the source area and the growth area to 500°C for 3 hours, while continuing to pass nitrogen gas with a flow of 600sccm into the vacuum chamber, then pass ammonia gas and its carrier with a flow of 300sccm into the vacuum chamber. Nitrogen with a flow of 200sccm. Next, the temperature of the source zone was raised to 850°C, and t...

Embodiment 2

[0018] Example 2: The preparation is completed according to the following steps: a) First, the sapphire substrate covered with aluminum nitride film and gallium nitride film is washed with acetone and ethanol in an ultrasonic bath for two consecutive times for 10 minutes, and then used Rinse with ionized water for 3 minutes and blow dry with purified nitrogen. Then, it is placed on the support frame in the vacuum chamber, and the vacuum chamber is placed under a nitrogen atmosphere, and the vacuum degree of the vacuum chamber under the nitrogen atmosphere is ≤ 1 atmosphere; wherein the flow rate of nitrogen is 1200 sccm. b) Raise the temperature of the source area and the growth area to 515°C for 2.9 hours. While continuing to pass nitrogen with a flow of 1200sccm into the vacuum chamber, then pass ammonia and its carrier with a flow of 390sccm into the vacuum chamber. Nitrogen at a flow rate of 290sccm. Next, the temperature of the source zone was raised to 865°C, and the tempera...

Embodiment 3

[0019] Example 3: The preparation is completed according to the following steps: a) First, the sapphire substrate covered with aluminum nitride film and gallium nitride film is washed with acetone and ethanol in an ultrasonic bath for two consecutive times for 10 minutes, and then used Rinse with ionized water for 3 minutes and blow dry with purified nitrogen. Then, it is placed on the support frame in the vacuum chamber, and the vacuum chamber is placed under a nitrogen atmosphere, and the vacuum degree of the vacuum chamber under the nitrogen atmosphere is ≤1 atmosphere; wherein the flow rate of nitrogen is 1800 sccm. b) Raise the temperature of the source area and the growth area to 530°C for 2.8 hours. While continuing to pass nitrogen at a flow rate of 1800sccm into the vacuum chamber, pass ammonia and its carrier at a flow rate of 450sccm into the vacuum chamber. Nitrogen at 350sccm flow rate. Next, the temperature of the source zone was raised to 880°C, and the temperature ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention discloses equipment and process for preparing monocrystalline GaN film material. The equipment includes a vacuum chamber with a nitrogen tube, a hydrogen chloride gas tube, an ammonia tube and an exhausting tube connected to its ends; a source area with built-in reaction cavity and a growth area with built-in holding frame inside the vacuum chamber; and metal Ga set inside the reaction cavity. The preparation process includes setting one substrate coated with aluminum nitride film and gallium nitride film on the holding frame, forming nitrogen atmosphere in the vacuum chamber, heating the source area and the growth area to 500-550 deg.c for 2.5-3 hr, introducing ammonia and nitrogen into the vacuum chamber, raising the temperature in the source area to 850-900 deg.c and that in the growth area to 1030-1070 deg.c, introducing nitrogen, ammonia and hydrogen chloride gas while rotating the holding frame to prepare high quality monocrystalline GaN film material.

Description

Technical field [0001] The invention relates to a device and method for preparing gallium nitride, in particular to a device and method for preparing gallium nitride single crystal film material. Background technique [0002] In recent years, GaN materials have been used in ultraviolet light emitting devices, microwave devices and high-power semiconductor devices due to their wide band gap, direct transition, high breakdown field strength, high thermal conductivity, and good physical and chemical stability. It has broad application prospects. Therefore, people have made some attempts and efforts to prepare gallium nitride materials. For example, the Chinese Patent Application Publication CN 1127804A published on July 31, 1996 discloses a "metal organic vapor phase epitaxy to prepare a nitride single crystal film Devices and methods". It intends to provide a device and method for growing GaN and its related compound single crystal thin films. The device adopts a structure in which...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B29/40
Inventor 刘贵锋解新建王玉琦
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com