Production of conducting wire

Abstract

The method comprises: providing a substrate on which a polycrystalline silicon layer has been already formed; forming a mask layer on the polycrystalline silicon layer; forming the spacer on the sidewall of the mask layer; using the mask layer having the spacer as the mask to remove a portion of polycrystalline silicon layer so as to expose the substrate; forming a insulating layer on the substrate filling out the opening, and the insulating layer and the mask layer has different etching selection; removing the mask layer to exposed the polycrystalline silicon layer; forming a metal silicides layer on the surface of the polycrystalline silicon layer.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a wire. Background technique [0002] As the integration of semiconductor components (Integrity) increases, the patterns and line widths in the corresponding components are also gradually reduced, resulting in an increase in the contact resistance between the gate and the wires in the component, resulting in a slower resistance-capacitance delay (RC Delay), This in turn affects the operating speed of the element. Since the resistance of metal silicide is lower than polysilicon (Polysilicon), and its thermal stability is also higher than that of general interconnection materials (such as aluminum), in order to reduce the contact resistance (Contact Resistance) when the wire is in contact with each electrode of the transistor, Metal silicide can be formed at the connection interface between each electrode of the transistor and the met...

AI Technical Summary

Problems solved by technology

However, in the high-temperature annealing process, the polysilicon will seep out, causing lateral diffusion (Lateral Diffusion), resulting in the phenomenon that the metal silicide 106 is also formed on the insulating layer 102

When the distance between the two polysilicon layers 101 is very small and the metal silicide 106 is formed on the insulating layer 102 is very serious, a bridging phenomenon will be caused, resulting in the problem that the polysilicon layers 101 are short-circuited and connected together.

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