Method for cleaning residual metal

Abstract

The present invention discloses a method of removing residual metal on a transition-metal silicide that is located at a silicon wafer substrate. In order to remove the residual metal, the first step is to carry out a surface oxidation treatment for the transition-metal silicide, after a protective layer is formed on the transition-metal silicide, the cleaning procedures of hydrogen chloride and hydrogen peroxide mixture (HPM) are used to clean the silicon wafer substrate for removing the residue metal.

Description

technical field [0001] The invention relates to a method for removing residual metal, in particular to a method for firstly forming a protective layer on the transition metal silicide, and then performing a removal step to remove the residual metal on the transition metal silicide. Background technique [0002] In the manufacturing process of integrated circuit (integrated circuit), transistor (transistor) is an extremely important electronic component, and as the size of semiconductor components becomes smaller and smaller, there are many improvements in the process steps of transistors, in order to produce volume Small but high-quality transistors. [0003] In terms of the current transistor technology, the fabrication of metal silicide is a way to improve the quality of transistors. Metal silicides are mostly fabricated using a self-aligned silicide (salicide) process. The fabrication method is to form the source / drain and gate structure after the source / drain is formed....

AI Technical Summary

Problems solved by technology

As shown in Figure 4, although the HPM removal process can effectively remove unreacted platinum, the transition metal silicide 30 formed on the substrate 12 will also interact with the chlorine gas (Cl) in the HPM removal process. 2 ) and other chemical components react, and then part of the transition metal silicide 30 is corroded and peeled off, forming a damaged region 42

Images