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Zinc oxide based rare magnetic semiconductor material and method for preparing the same

A dilute magnetic semiconductor, zinc oxide-based technology, applied in the direction of zinc oxide/zinc hydroxide, inorganic material magnetism, inductance/transformer/magnet manufacturing, etc., can solve the impact results and mechanism to be confirmed, the doping concentration should not be too high, It is not easy to realize and other problems, to achieve the effect of improving grain boundary defects, simple technology, and improving ferromagnetic properties

Inactive Publication Date: 2009-06-10
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, although magnetic ions can enter the compound semiconductor to obtain a certain room temperature ferromagnetism, due to the limitation of process conditions, the doping concentration cannot be too high, resulting in a low level of magnetic properties.
[0006] In order to improve the magnetic properties of dilute magnetic semiconductors at room temperature, researchers have tried various methods in recent years, including p-type doping, n-type doping, etc., but for ZnO, defect doping is not easy to achieve
Through research, Gamelin, Onattu D. Jayakumar and others pointed out that various grain boundary defects may have an important impact on the magnetic exchange of oxide semiconductors doped with transition metals, but the specific impact results and mechanisms have yet to be confirmed.

Method used

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  • Zinc oxide based rare magnetic semiconductor material and method for preparing the same
  • Zinc oxide based rare magnetic semiconductor material and method for preparing the same

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Embodiment 1: Preparation of nano-SiO 2 Add Zn 0.95 co 0.05 O dilute magnetic semiconductor powder

[0024] 1) Add zinc acetate (5.21g) and cobalt acetate (0.31g) with a molar percentage of 95:5 to 50ml of ethylene glycol methyl ether, and then add 0.5ml of ethanolamine to form a solution with a concentration of 0.5mol / L; Stir at room temperature until completely dissolved, continue to stir for 12 hours, and then stand and age for 24 hours to obtain a transparent and uniform sol;

[0025] 2) Put the sol in an oven at 100°C for 12 hours to obtain a gel;

[0026] 3) The gel was heat-treated at 300°C for 3 hours, and cooled with the furnace to obtain Zn 0.95 co 0.05 O dilute magnetic semiconductor powder;

[0027] 4) Zn will be obtained 0.95 co 0.05 O dilute magnetic semiconductor powder and nano-SiO 2 Mix and grind for 2 hours according to the mass ratio of 1:1;

[0028] 5) Heat-treat the ground mixed powder at 400°C for 1 hour to obtain nano-SiO 2 Add Zn 0.95...

Embodiment 2

[0029] Embodiment 2: Preparation of nano-C adding Zn 0.95 co 0.05 O dilute magnetic semiconductor powder

[0030] 1) Add zinc acetate (5.21g) and cobalt acetate (0.31g) with a molar percentage of 95:5 to 50ml of ethylene glycol methyl ether, and then add 0.5ml of ethanolamine to form a solution with a concentration of 0.5mol / L; Stir at room temperature until completely dissolved, continue to stir for 12 hours, and then stand and age for 24 hours to obtain a transparent and uniform sol;

[0031] 2) Put the sol in an oven at 100°C for 12 hours to obtain a gel;

[0032] 3) The gel was heat-treated at 300°C for 3 hours, and cooled with the furnace to obtain Zn 0.95 co 0.05 O dilute magnetic semiconductor powder;

[0033] 4) Zn will be obtained 0.95 co 0.05 O dilute magnetic semiconductor powder and nano-C are mixed and ground for 2 hours at a mass ratio of 1:1;

[0034] 5) Heat-treat the ground mixed powder at 400°C for 1 hour to obtain nano-C with added Zn 0.95 co 0.05 ...

Embodiment 3

[0035] Embodiment 3: Preparation of nano-SiO 2 Add Zn 0.95 Fe 0.05 O dilute magnetic semiconductor powder

[0036] 1) Add zinc acetate (5.21g) and ferrous acetate (0.31g) with a molar percentage of 95:5 to 50ml of ethylene glycol methyl ether, then add 0.5ml of ethanolamine to make a solution with a concentration of 0.5mol / L ; Stir at room temperature until completely dissolved, continue to stir for 12 hours, then leave to age for 24 hours to obtain a transparent and uniform sol;

[0037] 2) Put the sol in an oven at 100°C for 12 hours to obtain a gel;

[0038] 3) The gel was heat-treated at 300°C for 3 hours, and cooled with the furnace to obtain Zn 0.95 co 0.05 O dilute magnetic semiconductor powder;

[0039] 4) Zn will be obtained 0.95 Fe 0.05 O dilute magnetic semiconductor powder and nano-SiO 2 Mix and grind for 2 hours according to the mass ratio of 1:1;

[0040] 5) Heat-treat the ground mixed powder at 400°C for 1 hour to obtain nano-SiO 2 Add Zn 0.95 Fe 0....

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Abstract

The invention discloses a nanometer additive zinc-based oxide diluted magnetic semiconductor material and a preparation method of the material, comprising following steps: preparing zinc-based oxide diluted magnetic semiconductor polycrystal powder, the molecular structural formula is Zn1-xTMxO, wherein TM represents transition metal elements Fe, Co, Ni and Mn, the concentration of which is x equals to 0 to 10%; obtaining higher magnetic properties diluted magnetic semiconductor powder sample by adding nanometer SiO2 or nanometer C powder; dissolving zinc acetate and transition metal salts as precursors in ethylene glycol monomethyl ether, adding proper stabilizing agent ethanolamine, and stirring until the mixture dissolves; obtaining Zn1-xTMxO polycrystal powder after aging, drying and heat treatment; mixing the powder and nanometer powder and grinding the mixture adequately; after a repeated heat treatment, the required nanometer additive zinc-based oxide diluted magnetic semiconductor material is prepared. The invention has the advantages of introducing nanometer powder successfully on the basis of the preparation of ambient temperature ferromagnetic zinc-based oxide diluted magnetic semiconductor material, overcoming the grain boundary drawback and improving the material magnetic properties.

Description

technical field [0001] The invention relates to a nano-added zinc oxide-based dilute magnetic semiconductor material and a preparation method. Background technique [0002] The modern information industry mainly uses the degree of freedom of electrons in semiconductor devices to process and transmit information, and storage devices such as magnetic tapes, hard disks, and magneto-optical disks use the degree of freedom of electrons to store information. How to combine these two properties to explore new functional materials and further enhance the performance of semiconductor and magnetic devices will be the goal of the next development. The main reason why the spin of carriers in traditional semiconductor materials is not fully utilized is that most of the materials used in the information industry are diamagnetic (such as Si and GaAs, etc.). The dilute magnetic semiconductor (DMS) formed by substituting magnetic ions (transition group metal elements or rare earth elements)...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/40H01F41/00C01G9/02B22F9/16
Inventor 严密顾浩马天宇罗伟
Owner ZHEJIANG UNIV