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Organometallic complex, light-emitting solid, organic electroluminescent element and organic electroluminescent display

An electroluminescent element and organometallic technology, applied in the direction of electroluminescent light sources, platinum-based organic compounds, platinum-group organic compounds, etc., can solve problems such as few strong phosphorescent materials, narrow selection range, and insufficient phosphorescence efficiency

Active Publication Date: 2009-10-07
UDC IRELAND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the case of using phosphorescent materials, there is a problem that there are very few materials that emit strong phosphorescence at room temperature, and the range of selection of these materials is very narrow
[0008] However, the phosphorescence efficiency (quantum yield of photoluminescence) of this metal complex is insufficient at room temperature, and there is a problem that the phosphorescence efficiency is low in an organic EL device using this metal complex.

Method used

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  • Organometallic complex, light-emitting solid, organic electroluminescent element and organic electroluminescent display
  • Organometallic complex, light-emitting solid, organic electroluminescent element and organic electroluminescent display
  • Organometallic complex, light-emitting solid, organic electroluminescent element and organic electroluminescent display

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0427] The Pt(dpt)(o2Fph) synthesized in Synthesis Example 1 was made into a thin film (luminescent solid) with a thickness of 50 nm by co-evaporation method on the glass substrate, and was doped into CBP at 2% according to the vapor deposition rate. According to the following assay method, with the known PL quantum yield (PL quantum yield: 22%) of three (8-hydroxyquinoline) aluminum (Alq3) thin film as reference, calculate the PL quantum yield of this thin film (luminescent solid) rate (photoluminescence).

[0428] That is, excitation light (365 nm constant light) from a light source is obliquely irradiated onto a thin film sample on a transparent substrate. The PL spectrum of the thin film was measured by a spectroradiometer (Minolta, CS-1000) 104, and the number of PL photons [P(sample)] was calculated from the conversion of the PL spectrum. While performing luminescence measurement, the total intensity [I(sample)] of excitation light transmitted and reflected from the sam...

Embodiment 2-30，30a-c， and comparative Embodiment 1-7

[0431] In addition to changing the organometallic complex as the luminescent material from Pt (dpt) (o2Fph) to the organometallic complexes listed in Table 6-Table 8 (synthesized by the above-mentioned synthesis examples), in the same example 1 Under the same conditions, measure the quantum yield of phosphorescence of the formed thin film (luminescent solid). The results are shown in Table 6 to Table 8.

[0432] Table 6

[0433] Luminescent material

[0434] Table 7

[0435] Luminescent material

[0436] Table 8

[0437] Luminescent material

[0438] From the results shown in Table 6 to Table 8, it is obvious that the phosphorescent film made of the organometallic complex of the present invention has a very high quantum yield of phosphorescent emission.

Embodiment 31

[0440] A multilayer organic EL device was fabricated using the obtained organometallic complex Pt(dpt)(o2Fph) as a light-emitting material for the light-emitting layer. The glass substrate with the ITO electrodes attached thereon was cleaned with water, acetone and isopropanol. Vacuum vapor deposition equipment (vacuum degree=1×10 -4 Pa, substrate temperature = room temperature) 4,4',4"-tris(2-naphthylphenylamino)triphenylamine (2-TNATA) as a positive hole injection layer is formed on the ITO electrode to a thickness of Be 4nm.Then form the above-mentioned NPD as the positive hole transport layer on the positive hole injection layer, to a thickness of 10nm.Form the above-mentioned BCP as the positive hole blocking layer on the light-emitting layer, to a thickness of 20nm.In this positive Form the above-mentioned Alq3 as the electron transport layer on the hole blocking layer, to a thickness of 20nm.Then on the electron transport layer, the vapor deposition of LiF to a thickne...

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Abstract

An object of the present invention is to provide an organic EL element or the like employing the aforementioned organometallic complex, which exhibits phosphorescence-emitting properties, has excellent luminous efficiency, thermal and electrical stability, and long operating life. The properties of the organometallic complex contained in the organic EL element of the present invention include: a metal atom; a three-atom bond to the metal atom through two nitrogen atoms and a carbon atom, and the carbon atom is located between the two nitrogen atoms and a monodentate ligand that performs single-atom coordination with the above-mentioned metal atom through one selected from N atom, O atom and S atom, and the ligand also includes The position has a substituent, or a ring structure substituted by a halogen atom.

Description

[0001] Cross References to Related Applications [0002] This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2004-321295 with a filing date of November 4, 2004, which is incorporated herein by reference in its entirety. technical field [0003] The present application demonstrates phosphorescence emission and relates to organic electroluminescent (EL) elements utilizing organometallic complexes or light emitting solids suitable for use as light emitting elements in organic EL elements and light emitters, etc. material, color conversion material, etc., and the present invention also relates to an organic EL display using the organic EL element. Background technique [0004] An organic EL element includes one or more thin organic layers located between a positive electrode and a negative electrode. When positive holes from the positive electrode and electrons from the negative electrode are respectively injected into the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07F15/00C09K11/06H05B33/14H10K99/00
CPCC09K2211/1011C09K2211/1037H01L51/0087C07F15/0086C09K2211/185C09K2211/1033H01L27/322C09K2211/1007C09K11/06C09K2211/1059H05B33/14C09K2211/1044H01L51/5016H10K59/38H10K85/346H10K50/11H10K2101/10
Inventor 外山弥佐藤佑猿渡纪男
Owner UDC IRELAND
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