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Surfactant method for preparing surface smooth high quality zinc oxide epitaxial film

A zinc oxide and epitaxial film technology, applied in chemical instruments and methods, from condensed steam, crystal growth, etc., can solve problems such as small viscosity coefficient, roughness, and short migration length

Inactive Publication Date: 2010-02-03
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During the epitaxial growth process of ZnO polar film, the viscosity coefficient of zinc atoms on the surface is small, the migration length is short, and it is not easy to form a layered growth mode, which leads to the formation of a rough ZnO surface, which is very important for the subsequent electrode deposition, micro The processing technology and the manufacture of the device have very serious adverse effects, which greatly affects the device application of the zinc oxide film

Method used

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  • Surfactant method for preparing surface smooth high quality zinc oxide epitaxial film
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  • Surfactant method for preparing surface smooth high quality zinc oxide epitaxial film

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Embodiment 1

[0035] The specific steps for preparing a high-quality ZnO film with a smooth surface using Li element as a surfactant on the island-shaped oxygen-polar zinc oxide epitaxial surface are as follows:

[0036] 1) Using the known molecular beam epitaxy method, the substrate temperature is 650°C to grow the oxygen polar zinc oxide epitaxial film, and the beam current of Zn is 3×10 14 atoms / cm 2 s, oxygen radio frequency plasma power is 350W, oxygen flow rate is 2.0sccm;

[0037] 2) In the epitaxial process, when the thickness of the grown zinc oxide reaches 300nm-1000nm, Li doping is started, the doping amount is small, and the beam current is 3×10 12 atoms / cm 2 s, the doped growth lasted for 0.5 hours, and a flat ZnO surface could be obtained; the two-dimensional growth of ZnO thin films was realized by using the surfactant effect of alkali metal Li on the oxide surface; Annealing is performed under an oxygen atmosphere; the annealing time is 30 minutes.

Embodiment 2

[0039] Except replacing Li with alkali metal Na as surfactant, all the other are the same as embodiment 1.

Embodiment 3

[0041] Except replacing Li with alkali metal K as surfactant, all the other are the same as embodiment 1.

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Abstract

The invention discloses a process for obtaining high quality leveling zinc oxide polar surface using surfactant elements, uses plasma to assist a molecular beam epitaxy system, during the epitaxy of zinc oxide film with single polarity, using the surfactant effect of alkali metal or alkaline earth on the surface of the zinc oxide and through changing an island growth mode of the zinc oxide film, the two-dimensional growth of the surface is achieved, thereby obtaining the leveling zinc oxide surface which is beneficial to made devices. The process is capable of effectively solving the problemsof rough surface which is caused during the epitaxial growth process of prior polar zinc oxide film heterogeneous because the growth of the three-dimensional island mode, thereby achieving a typical two-dimensional growth, and obtaining leveling surface of polar zinc oxide. The zinc oxide film which is prepared by the invention has an atomic-scale levering surface and excellent optical performance, and is suitable for preparing heterojunction, quantum well and high performance optoelectronic devices.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation. Specifically, it relates to a method for preparing a high-quality zinc oxide film with a smooth surface by using a surfactant, especially during the epitaxy process of a polar zinc oxide film, by adding an alkali metal or an alkaline earth metal as a surfactant to remove impurities A method for inducing growth to obtain a zinc oxide thin film with device-level flatness. Background technique [0002] As a third-generation wide-bandgap semiconductor material, ZnO has many excellent properties, such as piezoelectricity, transparent conductivity, and gas sensitivity, making it widely used in transparent conductive films, surface acoustic wave devices, piezoelectric ceramics, and gas sensors. already has a wide range of applications. As a direct transition type II-VI semiconductor, ZnO has a band gap of 3.37eV at room temperature, which is close to that of GaN. At the same time, du...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/08
Inventor 袁洪涛梅增霞杜小龙曾兆权马丽颖薛其坤贾金锋
Owner INST OF PHYSICS - CHINESE ACAD OF SCI