Method and system for detecting spin valve magnetic marked immunity biosensor array, and system
A biosensor and detection system technology, applied in the field of bioimmune detection, can solve the problems of not revealing the sensitivity of the insulating material biosensor, the sensitivity is not high, and there is no revealing, so as to achieve the effect of improving the sensitivity, improving the detection efficiency and improving the detection accuracy
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Embodiment 1
[0065] The present invention provides a GMR spin valve magnetic label immune biosensor array detection method for judging whether eight target antigens (such as virus molecules) are contained in a sample to be tested (such as a blood sample), the method comprising:
[0066]Connect eight initial GMR spin valve chips to a detection module, and measure the magnetically sensitive areas of these eight initial GMR spin valve chips. In the prior art, a chip array is integrated on the detection module. In this embodiment, the initial GMR spin valve chip adopts the spin valve developed by Shenzhen Huaxia Magnetic Electronics Technology Development Co., Ltd. disclosed in Chinese Patent Application No. 02147695.0. Its structure is shown in Figure 3, which includes pinned layer 1 , pinned layer 2 , nonmagnetic spacer layer 3 and free layer 4 . In the free layer of the spin valve structure, a low coercive force ferromagnetic material NiFeMoMn is used, thereby obtaining a spin valve giant ...
Embodiment 2
[0076] This embodiment is similar to Embodiment 1, the difference is:
[0077] The active protective film is a polytetrafluoroethylene film prepared by radio frequency magnetron sputtering deposition method, wherein the sputtering pressure is 8Pa, the radio frequency voltage is 700V, the radio frequency current is 170mA, the self bias voltage is 200V, and the sputtering time is 30 minutes.
[0078] At this time, the sputtering power of the plasma magnetic filtration chemical vapor deposition is 8W, the excitation current is 6A, the sputtering pressure is 20Pa, the substrate bias is 0V, and the modification time is 15min.
Embodiment 3
[0080] This embodiment is similar to Embodiment 1, the difference is:
[0081] The active protective film is a diamond-like carbon film prepared by plasma magnetic filtration chemical vapor deposition, wherein the sputtering power is 8W, the excitation current is 5A, the sputtering pressure is 20Pa, the substrate bias is -20V, and the deposition time is 2 hours.
[0082] At this time, the sputtering power of the plasma magnetic filtration chemical vapor deposition used to form ammonia functional groups was 8W, the excitation current was 5A, the sputtering pressure was 20Pa, the substrate bias was 10V, and the modification time was 15min.
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