Silicon base covariant underlay with the ultrathin carbon silicon middle layer and its preparing method

Abstract

The silicon-base coviant substrate with ultrathin SiC intermediate layer comprises: from bottom to top, a silicon substrate for support, a ultrathin 3C-SiC intermediate layer for mismatch strain coordination, and an extension layer with much lattice mismatch with the substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a silicon-based variable substrate with an ultra-thin silicon carbide intermediate layer prepared by ion beam epitaxy equipment. Background technique [0002] In addition to the advantages of good quality, low price, large size, mature device technology and integration, silicon (Si) also has good thermal and electrical conductivity, so it is often used as a large mismatch heterostructure material zinc oxide (ZnO ), gallium nitride (GaN) and aluminum nitride (AlN) and other epitaxial growth substrates. However, due to the large lattice mismatch and thermal expansion coefficient difference, as well as the influence of interfacial chemical problems, it is difficult to achieve satisfactory results by direct growth. The use of substrate preparation technology is the main means to solve the problem of large mismatch epitaxy, that is, by changing the crystal structure, physical ...

AI Technical Summary

Problems solved by technology

However, the existing conventional SiC thin film preparation and growth processes, such as chemical vapor deposition (CVD), magnetron sputtering, and plasma-assisted deposition, are difficult to achieve low temperature (below 1000°C) for 3C-SiC thin films on Si substrates. ) ultra-thin (several to tens of nanometers) high-purity and high-quality growth, so it is impossible to obtain Si-based ultra-thin 3C-SiC interlayer covariable substrates with high crystal quality and smooth and flat surface

Images