Making method for current induction wafer resistor
A chip resistance and manufacturing method technology, applied in the field of electromechanical, can solve the problems of low power, low conductivity and low precision, and achieve the effects of high power, high thermal conductivity and high precision
Active Publication Date: 2007-09-12
VIKING TECH CORP
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Problems solved by technology
[0003] The purpose of the present invention is to provide a method for manufacturing a current-sensing chip resistor, which solves the problems of low power, low precision and low conductivity in the common resistor manufacturing process.
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[0010] As shown in Figure 2 and Figure 3, the resistor manufacturing process B of the present invention includes a pre-process C and a post-process D, wherein the pre-process C is to firstly coat the aluminum nitride (AlN) substrate C1 with a resistive masking layer Cloth C2, after coating C2 on the resistance masking layer, carry out vacuum coating C3 on the resistance layer, then remove the resistance masking layer C4 from the aluminum nitride (AlN) substrate C1, and after removing the resistance masking layer C4, then Coating C5 of the resistance protection layer, and after coating, electroplating C6 of the conductive layer on the aluminum nitride (AlN) substrate C1, and then performing laser grain separation and cutting C7, and entering the The step of post-process D;
[0011] In the post-process D, the aluminum nitride (AlN) substrate C1 is cut and adjusted by laser to adjust the resistance value D1 to adjust the accuracy of the resistance value, and then the resistance p...
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The invention relates to a manufacture method of electro response chip resistor, which belongs to the electromechanical kind. It contains two steps of front produce process and back produce process, among, the front produce process step contains the aluminium nitride (AlN) basal plate to carry on the resistance shade layer coating, the resistance layer vacuum coating, remove the resistance shade layer, the resistance protector coating, conductive layer galvanization and the laser crystal grain separation cuts; The latter step contains the laser resistance value to cut and adjustment, resistance protector printing, character code printing, the resistance protector dries out hardened, the first broken line, the side conductor vacuum coating, the second broken line, the nickel galvanizing , the tin galvanizing and the resistor end product packing. Its merit lies in: using aluminium nitride (AlN) basal plate, film produce process and one-sided produce process cover crystal (Flip Chip) structure, may achieve high power, high accuracy, high thermal conductivity, and save the use space of printed circuit board, the strong usability.
Description
technical field [0001] The invention relates to electromechanical products, in particular to a method for manufacturing a current-sensing chip resistor. Background technique [0002] As we all know, the commonly used resistor manufacturing process A, which contains aluminum oxide (Al 2 o 3 ) Substrate A1 carries out back conductor printing A2, front resistance printing A3, front conductor printing A4, high temperature firing A5, glass protective layer printing A6 and glass protective layer firing A7, but because the former process A1 uses aluminum oxide (Al 2 o 3 ) Substrate A1, resistor manufacturing process A only uses thick film process, resulting in low power (1W), low precision (1%), low conductivity (15 ~ 20mW), high temperature coefficient and high noise, and because of The resistor manufacturing process A does not use the flip chip (Flip Chip) structure technology of the single-sided process, thereby increasing the space used by the printed circuit board (PCB, Pri...
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IPC IPC(8): H01C17/00H01C7/00
Inventor 萧胜利魏石龙
Owner VIKING TECH CORP