Knife scraping method glass passivation process for silicon current rectifier

Abstract

The invention provides a knife scraping glass passivating process for silicon rectifier which includes: (1) employing mixed acid to erode a diffusion chip which has been photoetched thereby forming PN junction and to remove photoresist; (2) compounding ethyl cellulose and thinner in ratio into solution and then filling the same and glass powder into an eggplant-shaped bottle to stir for making glass plasma; (3) equably coating the glass plasma on the surface of the silicon chip which has been etched with groove, and then removing the redundant glass plasma on electrode face by scraper; (4) pre-firing the coated silicon chip in a furnace for 20 min, 585 DEG C.; (5) taking out the fired silicon chip and erasing the redundant glass powder; (6) glass-melting the erased silicon chip in a furnace for 20 min, 820 DEG C.; (7) executing the procedures of coating, prefiring, erasing, melting for the glass-melted silicon chip once again; (8) plating nickel and gold on the passivated glass and then scribing the same thereby completing the chip of the silicon rectifier. The process can be easily operated, and has less equipment dependence, and is easy for application, and can reduce production cost and operation time.

Description

technical field [0001] The invention relates to a glass passivation process of a silicon rectifier device, in particular to a knife-scraping glass passivation process of a silicon rectifier device. technical background [0002] At present, the process of manufacturing silicon rectifier devices in the semiconductor industry is mostly to cut the diffused silicon wafers to form hundreds of chips. After mesa etching, welding of leads, and cleaning, glass coating is performed on the PN junction mesa of each chip to To achieve the effect of passivation protection, the operation is complicated, the time is long, the efficiency is low, and the production cost is high. Contents of the invention [0003] The invention provides a knife scraping method glass passivation process for silicon rectifier devices. Firstly, glass slurry is prepared, and the glass slurry is evenly applied to the groove of the PN junction table surface of the silicon wafer after photolithography by the knife s...

AI Technical Summary

Problems solved by technology

[0002] At present, the process of manufacturing silicon rectifier devices in the semiconductor industry is mostly to cut the diffused silicon wafers to form hundreds of chips. After mesa etching, welding of leads, and cleaning, glass coating is performed on the PN junction mesa of each chip to To achieve the effect of passivation protection, the operation is complicated, the time is long, the efficiency is low, and the production cost is high