Semiconductor laser device and manufacturing method thereof

A technology of laser devices and manufacturing methods, applied in the direction of semiconductor laser devices, semiconductor lasers, laser devices, etc., capable of solving problems such as reducing the reliability of active layers

Inactive Publication Date: 2007-10-03
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, excessive diffusion of Zn leads to reduced

Method used

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  • Semiconductor laser device and manufacturing method thereof
  • Semiconductor laser device and manufacturing method thereof
  • Semiconductor laser device and manufacturing method thereof

Examples

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Embodiment 1

[0058] Dual wavelength semiconductor laser device

[0059] FIG. 1A is a schematic oblique view of a semiconductor laser device according to Embodiment 1 of the present invention. FIG. 1B is a cross-sectional view of FIG. 1A along line A-A'.

[0060] According to this embodiment, the monolithic dual-wavelength semiconductor laser device consists of an n-type GaAs substrate 101 and an infrared laser unit 110 and a red laser unit 120 mounted on the substrate 101 . Each laser unit has the following configuration.

[0061] The infrared laser unit 110 has the following layers laminated on the n-type GaAs substrate 101 in the order described: n-type GaAs buffer layer 102; n-type (Al x Ga 1-x ) y In 1-y P cladding layer 103; Active layer 104 based on GaAs / AlGaAs; p-type (Al x Ga 1-x ) y In 1-y P first cladding layer 105; p-type GaInP etch stop layer 106; p-type (Al x Ga 1-x ) y In 1-y P second cladding layer 107; p-type GaInP intermediate layer 108; and p-type GaAs contac...

Embodiment 2

[0118] Fig. 6A is a perspective view of a semiconductor laser device according to Embodiment 2 of the present invention. 6B and 6C are cross-sectional views of the semiconductor laser device.

[0119] The semiconductor laser device of Embodiment 2 is basically similar in structure to the semiconductor laser device of Embodiment 1. The difference is that the current blocking layer is made of AlInP. In addition, the manufacturing method is also different from Example 1. The second manufacturing method is described below with reference to FIGS. 5 and 6 .

[0120] Through the same steps shown in FIGS. 2A-3B of Embodiment 1, the ridges constituting the partial waveguide were formed.

[0121] Next, as shown in Figure 5A, photolithography is used to etch the SiO 2 Thin films (not shown) and contact layers 309 and 319 are removed to remove regions where they exist above window structure 331 .

[0122] Next, as shown in FIG. 5B, AlInP is selectively grown to form the current block...

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Abstract

A semiconductor laser device is prepared as integrating infrared laser unit and red laser unit on n type of semiconductor substrate in monolithic way, setting ridge waveguide and window both being formed by Zn diffusion on each said infrared laser unit and each said red laser unit, arranging said infrared and red laser units in their own Pa and Pb types of layers on waveguide ridge and setting Pa type of contact layer to be thinner than Pb type of contact layer.

Description

[0001] This application is based on application No. 2004-283887 filed in Japan, the contents of which are incorporated herein by reference. technical field [0002] The invention relates to a semiconductor laser device and a manufacturing method thereof. More specifically, the present invention relates to a monolithic dual-wavelength semiconductor laser device having two semiconductor lasers having mutually different oscillation wavelengths and a method of manufacturing the same. Background technique [0003] In recent years, large-capacity DVD drives for recording and playing back optical information have rapidly become common in various fields, notably in the field of video players. It is highly desirable for a DVD drive to be able to read traditional recording media such as CDs, CD-Rs and CD-RWs. To meet this demand, DVD drives have two light sources for optical pickups to record and play DVDs and CDs. The one used for DVDs is a red semiconductor laser that emits light ...

Claims

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Application Information

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IPC IPC(8): H01S5/40H01S5/22H01S5/10H01S5/00
Inventor 鹿岛孝之牧田幸治吉川兼司
Owner PANASONIC CORP
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