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Complementary metal oxide semiconductor cascade high-gain current-to-voltage converter

An oxide semiconductor and cascode technology, applied in amplifiers with semiconductor devices/discharge tubes, logic circuit coupling/interfaces using field effect transistors, amplifiers, etc., can solve the problem of occupying silicon chip area and complex circuit structure High gain and simple structure are achieved

Active Publication Date: 2007-10-31
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

[0002] In order to detect the weak current signal (pA level) output by the MEMS electric field sensor, it is necessary to design a high-gain current-voltage converter. The traditional current-voltage converter is composed of an amplifier and a feedback resistor [see: Pittet, P.; Lu, G.N.; El Mourabit, A, On-chip transimpedance preamplifier for CMOS BDJ optical detector using active enhanced impedance loads 9th International Conference on Electronics, Circuits and Systems, 2002]. In addition to the complexity of the circuit structure, high Gain requires a particularly large resistance, which takes up a lot of silicon area; there is also a tradeoff between speed and stability, so it is necessary to design a high-gain current-voltage converter with a simple structure

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  • Complementary metal oxide semiconductor cascade high-gain current-to-voltage converter

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Embodiment Construction

[0014] Referring to Fig. 1, Fig. 2 and Fig. 3, the present invention contains two structures: 1, self-biased cascode (Cascode) high-gain current-voltage converter; 2, external current source biased cascode (Cascode) High Gain Current-to-Voltage Converter.

[0015] A self-biased cascode high-gain current-to-voltage converter is composed of a cascode current mirror composed of 4 PMOS transistors and a cascode current mirror composed of 4 NMOS transistors. The small current signal is input from the junction of the upper and lower current mirrors, mirrored by two current mirrors, and the output voltage is equal to the product of the input current and the resistance of the output cascode structure; the external current source biases the cascode high-gain current voltage The converter contains two bias structures, type I and type II. Type I adds a current source and two NMOS transistors to provide bias current for the following NMOS current mirror on the basis of the self-bias curre...

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Abstract

A kind of CMOS common source common bar high plus current voltage converter, The invention relates to current voltage converting technique field, it includes common source common bar current mirror composed by transistors, the common source common bar current mirror is end-to-end joint by the common source common bar current mirror composed by four PMOS transistors and the common source common bar current mirror composed by four NMOS transistors, the alternating current signal is input from the joint position of upper and lower current mirror, and imaged by two current mirrors, the output voltage equals to the product of input current and output common source common bar structure resistance. The invention converts tiny pA class current signal to mV voltage, realizes high plus with character that the output resistance of the common source common bar current mirror is big, the structure is simple and plus is big, because there is feedback resistance, problem of stability does not be taken into account.

Description

technical field [0001] The invention relates to the technical field of current-voltage converters, in particular to a complementary metal-oxide-semiconductor (CMOS) cascode high-gain current-voltage converter. Background technique [0002] In order to detect the weak current signal (pA level) output by the MEMS electric field sensor, it is necessary to design a high-gain current-voltage converter. The traditional current-voltage converter is composed of an amplifier and a feedback resistor [see: Pittet, P.; Lu, G.N.; El Mourabit, A, On-chip transimpedance preamplifier for CMOS BDJ optical detector using active enhanced impedance loads 9th International Conference on Electronics, Circuits and Systems, 2002]. In addition to the complexity of the circuit structure, high Gain requires a particularly large resistance, which takes up a lot of silicon chip area; it also needs to compromise between speed and stability, so it is necessary to design a high-gain current-voltage convert...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/345H03F3/347H03K19/0185
Inventor 杨海钢崔国平
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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