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Automatic controlling method for increasing AIN medium film reaction direct current sputtering speed

A technology of direct current sputtering and dielectric thin film, which is applied in sputtering coating, electrical program control, program control in sequence/logic controller, etc. It can solve the problems of slow response speed of MFC and difficulty in satisfying real-time control, etc., to meet the requirements of The effect of real-time control

Inactive Publication Date: 2007-11-28
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the response speed of MFC is slow (response time > 1 second), and it is difficult to meet the needs of real-time control

Method used

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  • Automatic controlling method for increasing AIN medium film reaction direct current sputtering speed
  • Automatic controlling method for increasing AIN medium film reaction direct current sputtering speed

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] On borosilicate 3.3 glass substrate, using Ar, N 2 Reactive DC sputtering Al target to produce AlN dielectric thin film. The flow rate of Ar is 50 sccm, and the sputtering current I=30A. Only the air pressure P when Ar is lit Ar =0.4Pa, through excess N 2 Hourly nitrogen partial pressure P N ≥0.12Pa, the sputtering rate is about 1.5nm / min; using the present invention, the nitrogen partial pressure P N Controlled at 0.03Pa, the sputtering rate reaches 6nm / min.

Embodiment 2

[0026] On a stainless steel substrate, using Ar, N 2 Reactive DC sputtering Al target to produce AlN dielectric thin film. The flow rate of Ar is 70 sccm, and the sputtering current I=40A. Only the air pressure P when Ar is lit Ar =0.6Pa, through excess N 2 Hourly nitrogen partial pressure P N ≥0.1Pa, the sputtering rate is about 2nm / min; using the present invention, the nitrogen partial pressure P N Controlled at 0.01Pa, the sputtering rate reaches 8nm / min.

Embodiment 3

[0028] On a silicon substrate, using Ar, N 2 Reactive DC sputtering Al target to produce AlN dielectric thin film. The Ar flow rate is 50 sccm, and the sputtering current I=20A. Only the air pressure P when Ar is lit Ar =0.4Pa, through excess N 2 Hourly nitrogen partial pressure P N ≥0.12Pa, the sputtering rate is about 1nm / min; using the present invention, the nitrogen partial pressure P N Controlled at 0.02Pa, the sputtering rate reaches 2nm / min.

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Abstract

An automatic control method for improving the reaction dc sputtering speed of AIN medium film, which belongs to vacuum solid film facture technology field. During sputtering process, N2 reacts with Al butt surface to generate AlN, a control system sets the dividing voltage value PN of N2 of the reaction chamber, the control system also measures the air pressure PAr of the reaction chamber which only allows Ar plasm pass through, and N2 is pumped into the chamber to implement reaction sputtering; to adjust N2 input flow amount based on the setting N2 dividing voltage, when the actual air pressure P of the reaction chamber is above to the sum of PN and PAr, N2 is excessive, a controller reduces N2 input flow; when the air pressure P of the reaction chamber is below to the sum of PN and PAr, N2 is deficient, the controller increases N2 input flow. The present invention also provides a automatic control system which improves the reaction dc sputtering speed of AIN medium film based on N2 dividing voltage control. The present invention makes the dividing voltage PN of the remainder N2 steady with a relative low value, which ensures the AlN purity in the film, also possesses a higher sputtering speed.

Description

technical field [0001] The invention relates to an automatic control method for increasing the reactive DC sputtering rate of AlN dielectric thin film, which belongs to the technical field of vacuum solid film production, especially the technical field of solar selective absorption coating production. Background technique [0002] AlN dielectric thin film materials have high thermal and chemical stability, high transmittance to the solar spectrum, and are widely used in the field of solar thermal utilization. For example, Al-AlN selective absorption coatings are widely used in medium and low temperature solar collectors, and AlN dielectric films are required as anti-reflection coatings for the coatings (Yin Zhiqiang, "Sputtered Solar Energy Selective Absorption Coating", Chinese Patent, Applicant : Tsinghua University, application number: 85100142). In high-temperature solar collectors, metal-dielectric thin film selective absorption coatings composed of refractory metals a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/52C23C14/06G05B19/04
Inventor 王健殷志强罗毅齐京张剑
Owner TSINGHUA UNIV