Semiconductor device contact resistant to deterioration due to heat and method for manufacturing contact

Abstract

A Contact according to an aspect of the present invention is formed by laminating a shape memory alloy film on a surface of a metal spring film, and the shape thereof is a conical spiral. A manufacturing method therefor is composed of 11 steps including a step of preparing a sacrificial metal film, a step of forming a resist cone, a step of patterning a resist film, a step of preparing a shape memory alloy film, and the like. Since an organic resist material has poor heat resistance, the sacrificial metal film is formed in advance, the resist is removed before sputtering of the shape memory alloy film, the sacrificial metal film is removed after sputtering of a shape memory alloy and a heat treatment, which are performed at high temperatures, so as to lift off an excess shape memory alloy film.

Description

technical field [0001] The present invention relates to a contact and a manufacturing method thereof, and more particularly to a contact suitable for electrical connection with a semiconductor device having a bump (protruding electrode) formed in a ball shape or a land shape, and to manufacturing the same method. Background technique [0002] Generally speaking, in the manufacturing process of semiconductor devices such as IC (Integrated Circuit: Integrated Circuit) or LSI (Large Scale Integration: IC with an integration level of 1,000 to 10,000 elements), the completed semiconductor device is combined with the so-called As a probe card (probe card) inspection wiring board connection, the input and output of the electrical signal of the semiconductor device can be inspected, thereby reducing the wasteful work caused by assembling defective semiconductor devices into the package (package). [0003] Here, in a probe card for inspecting a BGA (Ball Grid Array: ball grid electr...

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Problems solved by technology

However, shape memory alloys cannot be formed by plating

Moreover, although a shape memory alloy film can be formed by sputtering a shape memory alloy, if a desired shape is to be obtained by etching after sputtering, the material of the contact member has low etchant resistance to the etchant of the shape memory alloy, so , during the etching of the shape memory alloy, there is a disadvantage that the contacts will also be etched away

In addition, even if the resist is removed (lift-off), the sputtering of the shape memory alloy and its heat treatment must be performed in a high-temperature environment of about 200°C to 500°C, so even if an organic resist material is used Even when patterning is performed, the organic resist material cannot withstand the high-temperature environment, and contacts of the desired shape cannot be obtained.

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