Method for preparing ultra-thick polyimide film with high heat conductivity and low thermal expansion coefficient

A low thermal expansion coefficient, polyimide film technology, used in flat products, applications, coatings, etc., can solve problems such as circuit operating temperature rise, affecting the stability of electronic components and integrated circuits, and poor thermal conductivity.

Inactive Publication Date: 2008-04-30
JIANGYIN YUNDA ELECTRONICS NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Ordinary polyimide thick film due to poor thermal conductivity (0.18Wm -1 k -1 ), high coefficient of thermal expansion (55ppmk -1 ), making it difficult to dissipate the heat of the circuit and the temperature rise of the circuit in the high-density and high-speed operation of microelectronics, which affects the stabilit

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] Put 11,843 grams of N,N-dimethylacetamide (DMAC) into the reactor equipped with stirring, and then put in 1,000 grams of 4,4'-diaminodiphenyl ether to dissolve, and add 1,090 grams of pyromellitic acid after the dissolution is complete The dianhydride was reacted for 4 hours, and then 2.7 grams of nano-AlN6 treated with a coupling agent was added, and the reaction was continued for 4 hours to obtain a high-viscosity polyamic acid resin solution containing nano-thermal conductive materials. Cast this high-viscosity polyamic acid resin solution containing nano-thermal conductive materials on a stainless steel belt and dry it at 100-200°C. Thermal conductivity of 0.65 Wm -1 k -1 、The coefficient of thermal expansion is 26~31ppmk at 150~250℃ -1 ultra-thick polyimide film.

Embodiment 2

[0013] Put 11,843 grams of N,N-dimethylacetamide into the reactor equipped with stirring, and then put in 1,000 grams of 4,4'-diaminodiphenyl ether to dissolve. After the dissolution is complete, add 1,090 grams of pyromellitic dianhydride to react After 4 hours, add 1.35 grams of nano-AlN3 and 1.35 grams of nano-SiC3 treated with a coupling agent, and continue to react for 4 hours to prepare a high-viscosity polyamic acid resin solution containing nano-thermal conductive materials. Cast this high-viscosity polyamic acid resin solution containing nano-thermal conductive materials on a stainless steel belt and dry it at 100-200°C. The thermal conductivity is 0.61Wm -1 k -1 、The coefficient of thermal expansion is 25~30ppmk at 150~250℃ -1 ultra-thick polyimide film.

Embodiment 3

[0015] Add 14053 grams of N,N-dimethylformamide into the reactor equipped with stirring, then drop into 1000 grams of 4,4'-diaminodiphenyl ether for dissolution, add 1480 grams of 3,3'-4 after the dissolution is complete, 4'biphenyltetracarboxylic dianhydride was reacted for 4 hours, then 124 grams of nano-SiC treated with a coupling agent was added, and the reaction was continued for 4 hours to obtain a high-viscosity polyamic acid resin solution containing nano-thermal conductive materials. Cast this high-viscosity polyamic acid resin solution containing nano-thermal conductive materials on a stainless steel belt and dry it at 100-200°C. The thermal conductivity is 0.76Wm -1 k -1 、The thermal expansion coefficient is 21~26ppmk at 150~250℃ -1 ultra-thick polyimide film.

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Abstract

The invention relates to a method for preparing an ultra-thick polyimide film with high thermal conductivity and low thermal expansion coefficient. The process steps are: dissolving monomeric diamine in an aprotic polar solvent, adding The dianhydride and the surface-treated nano heat-conducting material are reacted for 4-10 hours to synthesize the polyamic acid resin containing the nano-heat conducting material. Wherein, the addition amount of the nano-thermal conductive material accounts for 1%-10% by mass of the synthetic polyamic acid resin; the preferred addition amount is 3%-8% by mass; Take it on the belt, dry it at 100-200°C, and dehydrate and imidize the obtained salivating film at a high temperature of 300-480°C to obtain an ultra-thick polyimide film with good thermal conductivity and low thermal expansion coefficient. The ultra-thick polyimide film prepared by the method of the invention has high thermal conductivity and low thermal expansion coefficient.

Description

technical field [0001] The invention relates to a method for preparing an ultra-thick polyimide film suitable for industries such as microelectronics, printed circuits, and voice coil frames. It belongs to the technical field of polymer insulating materials. technical background [0002] Ultra-thick polyimide film has been widely used in various motors, special electrical appliances, and high-temperature-resistant flexible printed circuit substrates due to its outstanding comprehensive properties such as good heat resistance, good chemical stability, good mechanical properties, and excellent dielectric properties. Materials, flat circuits and loudspeaker voice coil bobbins and other fields. In particular, the rapid development of microelectronics and integrated circuit industries in recent years has promoted the development of ultra-thick polyimide films. [0003] Ordinary polyimide thick film due to poor thermal conductivity (0.18Wm -1 k -1 ), high coefficient of therma...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08L79/08C08K9/06B29C41/24B29C41/34B29L7/00
Inventor 徐建国
Owner JIANGYIN YUNDA ELECTRONICS NEW MATERIAL
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