Method for deposition compact SiO2 with low damnification PECVD

Abstract

A kind of low-damage PECVD deposits the dense SiO2 method of masking layer, it is characterized in that, it comprises the steps as follows: Step 1: cleaning GaN substrate: GaN substrate cleans and blows dry with cleaning solution; Step 2: deposits SiO2 masking Layer: Put the cleaned and dried GaN substrate into the PECVD vacuum chamber to deposit SiO2; Step 3: After the SiO2 deposition is completed, continuously fill in N2, wait for the temperature of the chamber to drop, and exit GaN from the vacuum chamber The substrate goes to the pre-chamber, and the GaN substrate deposited with the SiO2 masking layer is taken out; step 4: the thickness of the grown SiO2 masking layer is measured using an ellipsometer.

Description

Technical field [0001] The invention is used in the field of optoelectronic device manufacturing technology, and specifically relates to a low-damage PECVD-deposited dense SiO during the manufacturing process of gallium nitride (GaN)-based power light-emitting diodes (LED) 2 Methods. Background technique [0002] In the process of preparing GaN-based LEDs, inductively coupled plasma (ICP) dry etching technology is usually used to form mesas and electrodes. Generally, the etching is relatively deep. Therefore, GaN-based materials have high etching rates for masking layer materials. The choice ratio is very important. At present, there are mainly three masks commonly used in ICP dry etching: photoresist, SiO 2 / SiN X And Ni and other metal materials. The photoresist manufacturing process is simple, but the photoresist uses plasma C 12 And BC 13 The etching selection ratio of the etching gas to the AZ9260 photoresist is less than 0.6:1, and after ICP etching, the remaining photoresi...

AI Technical Summary

Problems solved by technology

[0003] Currently used PECVD deposited SiO 2 method, generally in order to increase the deposition of SiO 2 Density and insulation strength, reduce the damage to the material during the ICP etching process, usually deposited under the radio frequency power greater than 80W, causing the radio frequency power to damage the material itself during the deposition process, resulting in increased leakage current and reduced luminous intensity of the device , affecting the reliability of power LEDs, however, too low PECVD deposition power will lead to SiO 2 Masking layer densification and insulation are reduced

Therefore, existing deposition methods cannot reduce the low damage of PECVD deposition process while having SiO 2 High compactness and dielectric strength

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