P type doping ZnO based rare magnetic semiconductor material and method of producing the same

Abstract

The invention discloses a p-type doped ZnO-based diluted magnetic semiconductor material and the preparation method. The material molecular structure formula is ZnTMyxO, in which Tm represents transition metal element, Co, Ni, Mn and other elements, x=0-10%, y=0-20%. Method is that zinc acetate, sodium acetate and transition metal salt are dissolved in ethylene glycol monomethyl ether as precursor; then ethanol is added as stabilizer; after stirring, the stable sol is formed. After the sol being dried and heat treated, the power sample is obtained; or by spin coating, the sol is coated uniformly on the Si wafer cleaned in advance or other substrates (quartz glass, sapphire, SiC and other materials), after being dried and heat treated, the thin film sample is obtained. The sol-gel method of preparing material has the advantage of simple technology, low cost, and obtaining easily large area thin films; based on the preparation of the room-temperature ferromagnetic ZnO-based diluted magnetic semiconductor, the Na ion is introduced successfully to obtain the p-type doping; therefore the magnetic property is improved, and by regulating concentration of the Na ion,the magnetic property is controlled.

Description

P-type doped ZnO-based dilute magnetic semiconductor material and preparation method technical field The invention relates to a p-type doped ZnO-based dilute magnetic semiconductor material and a preparation method. ZnO-based dilute magnetic semiconductor powders and thin films with room temperature ferromagnetism are mainly prepared by sol-gel method combined with co-doping approaches (such as transition metal elements and Na co-doping). Background technique The modern information industry mainly uses the degree of freedom of electrons in semiconductor devices to process and transmit information, and storage devices such as magnetic tapes, hard disks, and magneto-optical disks use the degree of freedom of electrons to store information. How to combine these two properties to explore new functional materials and further enhance the performance of semiconductor and magnetic devices will be the goal of the next development. The main reason why the spin of carriers in tradit...

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Problems solved by technology

But for ZnO, there has always been a defect that p-type doping is difficult, how to explore an effective way to introduce vacancies has become the difficulty of this research

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