Method for manufacturing AlGaN/GaN-HEMT employing selective regrowth

Abstract

The invention relates to a manufacturing method using AlGaN / GaN-HEMT which can selectively revegetate. The method includes preparing a semiconductor main body (110) formed with a laminated structure, which cascades a cushion breaker (102) on a substrate (100), a UID-GaN layer on the cushion breaker, and a UID-AlGaN layer on the UID-GaN layer. The pattern of an insulating film (112) is formed on the first major face (111) of the surface of the semiconductor main body used as the UID-AlGaN layer in order to form a mask of an insulating film (112'). An etching process is not processed on the surface of the semiconductor main body,therefore an nSUP and / SUP-GaN layer selectively revegetates on the surface of the major face (111) of the semiconductor main body apart from the area of the insulating film. An ohm electrode is divided, a preconcerted area (117) is formed and the ohm electrode (122) is formed in the area of the selectively revegetated nSUP and / SUP-GaN layer. Then a preconcerted area (123) is formed and an opening is formed by dividing a gate electrode, and the gate electrode (124) is formed.

Description

technical field [0001] The present invention relates to a method for manufacturing an AlGaN / GaN-HEMT used as a transmitting device and a high withstand voltage switching element of a mobile base station, and in particular to a method for manufacturing an AlGaN / GaN-HEMT using selective regrowth. AlGaN / GaN-HEMTs have ohmic contacts with lower contact resistance values. Background technique [0002] A high electron mobility transistor (High Electron Mobility Transistor: HEMT), which is an electronic device using gallium nitride (Gallium Nitride: GaN), is called AlGaN / GaN-HEMT. The HEMT is formed as follows: using an organic metal Epitaxial crystal growth methods such as Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) are sequentially stacked on SiC (Silicon Carbide) substrates, sapphire substrates, or Si substrates. A crystal film of GaN, AlGaN, or the like is grown to form an epitaxial substrate, and the obtained epitaxial substrate is processe...

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Problems solved by technology

[0020] However, according to the method disclosed in Non-Patent Document 1, n + -In the case of selective regrowth of the GaN layer, there are problems such as impurities deposited on the UID-AlGaN layer or the etched surface of the UID-GaN layer, etch damage, and the shape of the etched end, etc., resulting in the inability to obtain uniform in many cases film quality and film thickness n + -The selective regrowth of the GaN layer cannot obtain a sufficiently low contact resistance value, and the deviation of the value is also large

As a result, the characteristics of the produced AlGaN / GaN-HEMT devices vary, and the reliability of the device deteriorates

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