Low-power consumption wireless receiver radio frequency front end circuit
A wireless receiver, RF front-end technology, applied in electrical components, sustainable buildings, transmission systems, etc., can solve the problems of large number of on-chip inductors, large chip area, design difficulty and cycle increase
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[0055] The RF front-end structure is applied to the fully differential RF front-end circuit of the MB-OFDM UWB RF receiver in the 3.1GHz to 4.7GHz frequency band, and the specific design parameters are shown in Figure 8. Using 0.18um RF CMOS 1P6M process, the simulation tool is Cadence SpectreRF, where V B1 = 0.82V, V B2 =0.68V, the grid bias voltage of the main amplifier tube M1 / 2 of the RF amplifier stage is 1.08V, and the grid bias voltage of the LO switch stage tube is 0.8V.
[0056] The transformer used in the input matching network is a tapped planar on-chip transformer, the sixth layer of metal wiring, the inductance value of the primary coil is 3.5nH, the inductance value of the secondary coil is 0.8nH, the turns ratio is 1:0.48, and the coupling coefficient is about 0.4 ; The bridge transformer adopts a cross-type planar on-chip transformer, the sixth layer of metal wiring, the primary and secondary coils are 2n, that is, the turns ratio is 1:1, and the coupling coef...
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