Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatment

Abstract

The invention relates to a method of identifying crystal defect regions of monocrystalline silicon using metal contamination and heat treatment. In the method, a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared. At least one side of the sample is contaminated with metal at a contamination concentration of about 1x10<14>to 5x10<16>atoms / cm<2>. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.

Description

technical field [0001] The present invention relates to a method of manufacturing wafers for use in semiconductor devices, and more particularly to a method of identifying and evaluating various defect regions present in monocrystalline silicon ingots or silicon wafers. Background technique [0002] Generally, silicon wafers are fabricated using a floating zone (FT) or Czochralski (CZ) method. The CZ method is most widely used in the manufacture of silicon wafers. In the CZ method, polysilicon is placed in a quartz crucible. The polysilicon is heated and melted by a graphite exothermic material, and a seed crystal is immersed in the molten silicon. A single crystal silicon ingot is grown by pulling the seed upwardly while rotating the submerged seed. The grown silicon ingot is cut, etched and polished into silicon wafers. [0003] Single crystal silicon ingots or silicon wafers may have crystal defects, such as crystal originated particles (Crystal Originated Particle, C...

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Problems solved by technology

[0008] The third method has many disadvantages in terms of required evaluation time, required high-temperature heat treatment cost, and high-cost equipment and, the oxygen concentration in the sample is less than 10ppma (parts per millionatomic, one millionth atomic concentration) (new ASTM standard ), the third method cannot identify crystal defect regions

[0011] It can be seen that the above-mentioned existing methods for identifying crystal defect regions in single crystal silicon obviously still have inconvenience and defects in method and use, and need to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general method has no suitable method to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

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