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Solid-state imaging device and electronic device

A solid-state imaging device and imaging area technology, applied in semiconductor/solid-state device manufacturing, radiation control devices, televisions, etc., can solve the problems of reduced conversion efficiency and increased metal wiring capacitance, to achieve enhanced conversion efficiency, reduced parasitic capacitance, Effect of Enhanced Pixel Conversion Efficiency

Active Publication Date: 2008-06-11
SONY SEMICON SOLUTIONS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the pixel sharing structure, the floating diffusion FD is often divided, and in addition to the parasitic capacitance of the diffusion region due to each divided floating diffusion FD, the wiring capacitance of the metal wiring connecting the divided floating diffusion FD increase, the conversion efficiency decreases compared to the case where the pixel sharing structure is not used

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  • Solid-state imaging device and electronic device
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  • Solid-state imaging device and electronic device

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example

[0095] Some examples of the present invention will be described.

[0096] A first example of the present invention will be described with reference to Figs. 21A to 21C.

[0097] In the solid-state imaging device 1 in this example, the doping concentration in the FD, specifically, the doping concentration in the extended implant region 25a of the pixel 2 is lower than that in the impurity diffusion layer of the transistor of the peripheral circuit 3 . According to the impurity diffusion layer in the transistor of the peripheral circuit 3, usually the extended implantation region 25a has a surface impurity concentration of 1×10 20 / cm 3 or more to inject impurities. However, in the solid-state imaging device 1 of the present example, the impurity concentration of the extended implant region 25a is as low as one-tenth to one-hundredth of the surface impurity concentration.

[0098] Image quality may be prioritized in this configuration because contact resistance typically inc...

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Abstract

The present invention provides a solid-state imaging device having an imaging region of a plurality of pixels arranged in a two-dimensional matrix and a peripheral circuit that detects output signals from the pixels, a manufacturing method thereof, and an electronic device having the solid-state imaging device. The impurity concentration in the transistor of each pixel is lower than the impurity concentration in the transistor of the peripheral circuit. Further, the impurity concentration of the semiconductor well region under the floating diffusion portion of the pixel is set lower than the impurity concentration of the semiconductor well region under the transistor portion at the subsequent stage of the floating diffusion portion.

Description

technical field [0001] The present invention relates to a solid-state imaging device, a manufacturing method thereof, and an electronic device including the solid-state imaging device. Background technique [0002] A CMOS (Complementary Metal Oxide Semiconductor) solid-state imaging device (CMOS image sensor) is a solid-state imaging device that has attracted attention especially in recent years. Such a CMOS solid-state imaging device includes an imaging area having a plurality of pixels arranged in a two-dimensional matrix, and peripheral circuits provided around the imaging area. In the imaging area, each pixel has: a floating diffusion layer (FD), which converts the charge from the photoelectric conversion part (photodiode: PD) into a voltage signal; a transfer transistor, which transfers the charge from the photodiode to the floating a diffusion section; a reset transistor that resets charges of the floating diffusion section; and an amplification transistor that output...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/822H04N25/00
Inventor 佐藤麻纪大木进
Owner SONY SEMICON SOLUTIONS CORP