Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing Fe-Mn-Si magnetic shape memory alloy film

A memory alloy, fe-mn-si technology, applied in the preparation of magnetic shape memory alloy films, the field of preparation of Fe-Mn-Si magnetic shape memory alloy films, can solve the problem of magnetically induced strain stability and low repeatability, alloys The problems of high brittleness of bulk materials and high threshold of driving magnetic field can achieve the effect of low stress level, good thermal stability and excellent magnetic properties.

Inactive Publication Date: 2008-06-18
SHANGHAI UNIV OF ENG SCI
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the rapid development of microelectromechanical systems, low-field and high-sensitivity magnetic shape memory materials, as newly developed new electromechanical conversion smart materials, have broad application prospects. Induced strain has low stability and repeatability, and poor compositional uniformity, making it difficult to be a candidate material for MEMS

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing Fe-Mn-Si magnetic shape memory alloy film
  • Method for preparing Fe-Mn-Si magnetic shape memory alloy film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The present invention will be further described below in conjunction with the accompanying drawings, and embodiments of the present invention will be given.

[0012] The method for preparing Fe-Mn-Si magnetic shape-memory alloy thin film, the main creative point of the invention lies in: preparing Fe-Mn-Si magnetic shape-memory alloy thin film by magnetron sputtering.

[0013] The specific process steps are: select an alloy whose alloy composition is Fe50Mn50-Fe70Mn30 to prepare an alloy target with a diameter of 50-60mm and a thickness of 1-5mm, and select a single crystal silicon with a diameter of 50-60mm and a thickness of 1mm as a single crystal Silicon target: use pure copper sheet or glass as the substrate, place the Fe-Mn alloy target and single crystal silicon target at a distance of 50cm from the base and at a position 60 degrees from the substrate. The vacuum degree of the sputtering backside is -5 Under the condition of Pa, the Ar pressure is kept at 0.1-1.0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method used for preparing Fe-Mn-Si magnetic shape memory alloy film. The invention is characterized in that the Fe-Mn-Si magnetic shape memory alloy film is made by a two-target common sputtering method of magnetron sputtering. The invention has a detailed process that an alloy with a Fe50Mn50 to Fe70Mn30 composition is adopted for preparing an alloy target with a 50 to 60mm diameter and a 1 to 5mm thickness; a single crystal silicon with a 50 to 60mm diameter and a 1mm thickness is selected as a single crystal silicon target; a pure copper sheet or glass is adopted as a substrate; the Fe-Mn alloy target and the single crystal silicon target are arranged to a position which is 50 cm apart from the substrate and forms a 60-degree angle with the substrate; when a sputtering back vacuum degree is less than 10 <-5>Pa, a 0.1 to 1.0Pa of Ar pneumatic pressure is preserved in the sputtering process; the two-target common sputtering method is used for sediment on the substrate to get an applicable Fe-Mn-Si film; when in sputtering, the power of FeMn alloy target is between 50 and 150W while that of the single crystal silicon target is between 20 and 80W.

Description

technical field [0001] The invention relates to a method for preparing a magnetic shape memory alloy thin film, in particular to a method for preparing a Fe-Mn-Si magnetic shape memory alloy thin film, which belongs to the field of thin film preparation and application. Background technique [0002] Fe-Mn-Si is a new type of magnetic shape memory alloy. Magnetic shape memory alloys not only have the thermoelastic shape memory effect controlled by the temperature field of traditional shape memory alloys, but also have the magnetic shape memory effect controlled by the magnetic field, and are expected to become a new generation of driving and sensing materials after magnetostrictive materials. Fe-based magnetic shape memory alloys have a wider range of applications due to their significant advantages such as large deformation recovery, excellent phase transition pseudo-elasticity, and good thermal and stress cycle stability. With the rapid development of microelectromechanica...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01F10/12H01F41/18
Inventor 何亮钱士强
Owner SHANGHAI UNIV OF ENG SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com