Method for cleaning cavity of semiconductor etching equipment

Abstract

The invention relates to a method for cleaning the chamber of a semiconductor etching equipment. The procedures of the method are as follows: mixed gas composed of CIF3 and inert gas is used for cleaning the chamber of a semiconductor etching equipment. The inert gas or O2 or the mixed gas composed of the inert gas and O2 is used for cleaning the chamber of a semiconductor etching equipment. The method of the invention can attain the aim of cleaning the chamber of the semiconductor etching equipment on condition of non-plasma starting. The method can effectively prolong the service life of the part, reduce the number of metal particle and improve the yield rate of product. In addition, the method does not require plasma starting during the cleaning process, with the result that the cost of ownership can be further reduced during the processing of wafer.

Description

technical field [0001] The invention relates to a cleaning method for a chamber, in particular to a cleaning method for a semiconductor etching equipment chamber. Background technique [0002] Etching refers to the process of removing unnecessary parts from the wafer by physical or chemical methods in the integrated circuit manufacturing process. It is usually divided into two categories: wet etching and dry etching. Among them, wet etching refers to the method of etching by using liquid chemical reagents or solutions through chemical reactions; while dry etching mainly uses low-voltage discharge to produce etching. The ions or radicals of the plasma achieve the purpose of etching materials through physical effects such as bombardment or chemical reactions. [0003] Plasma etching is one of the key processes in integrated circuit manufacturing. Its purpose is to completely copy the mask pattern to the surface of the silicon wafer. Etching and etching of Via and Trench. No...

AI Technical Summary

Problems solved by technology

[0009] (1) The accumulation of deposits makes the chamber environment constantly change during the process, which affects process parameters such as etch rate and uniformity, resulting in the drift of the etching process

[0010](2) Deposit cracking will generate a large number of particles in the reaction chamber, which will significantly reduce the product yield (yield)

[0017]Whether it is a one-step or two-step dry cleaning process, it needs to be carried out under the condition of plasma ignition. At the same time, it will also etch the surface of the anodized metal cavity, which will reduce the life of the part, and will produce metal particles in the cavity, reducing the product yield

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