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Method for forming graphic pattern

A patterning and patterning technology, which is applied in the field of pattern formation in the step of forming fine patterns in the manufacturing method, can solve problems such as damage, poor process results, and inability to provide a protective lower layer.

Inactive Publication Date: 2008-07-16
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the photoresist layer is too thin, it may be damaged in the subsequent etching process and cannot provide the function of protecting the underlying layer from being etched, so that the process result is not very good

Method used

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  • Method for forming graphic pattern
  • Method for forming graphic pattern
  • Method for forming graphic pattern

Examples

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Embodiment Construction

[0021] see Figure 3 to Figure 9 , which shows a schematic cross-sectional view of a specific embodiment of the pattern forming method of the present invention, wherein the same elements or parts are still represented by the same symbols. It should be noted that the drawings are for illustration purposes only and are not drawn to original scale.

[0022] First, a substrate is provided, which may include an insulating layer, a conductive layer, or other layers to be patterned, such as silicon, aluminum, indium tin oxide, molybdenum, silicon dioxide, doped silicon dioxide, silicon nitride , tantalum, copper, polysilicon, ceramics, aluminum / copper mixtures, various polymer resins, etc., but not limited thereto. There is a layer to be etched on the substrate. Such as image 3 As shown, in this specific embodiment, the substrate includes a silicon substrate 30 and a gate dielectric layer 32 and a polysilicon layer 34 thereon as layers to be etched. A first resist layer 36 is fo...

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Abstract

The invention discloses a method for forming pattern which comprises the following steps of: providing a base board which comprises a for-etching layer; forming a first resist layer on the base board; patterning the top part of the first resist layer; forming a second resist layer on the patterned first resist layer; removing part of the second resist layer; etching the second resist layer, the first resist layer and the for-etching layer. The method of the invention can form a fine pattern, the thickness of the resist layer not being too small. Therefore, the adhesion problem between the resist layer and the base board can not occur and the resist layer can not have the problem of being unable to protect the lower layer structure because of the intolerance of etching.

Description

technical field [0001] The present invention relates to a method of forming a pattern, and more particularly to a method of forming a pattern used in the step of forming a fine pattern in a manufacturing process of a semiconductor device or the like. Background technique [0002] In the integrated circuit process, the lithographic process has already become an indispensable technology. Only through the photolithography process can semiconductor manufacturers successfully transfer the electronic circuit layout pattern to the semiconductor chip accurately and clearly. The photolithography process is mainly to first form the designed pattern, such as a circuit pattern or an implanted area layout pattern, on one or more photomasks, and then use stepping and scanning to expose the pattern on the photomask. Aiming machine station (stepper & scanner) is transferred to the photoresist layer on the semiconductor chip. [0003] Existing projection lithography systems project pattern...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/027H01L21/308H01L21/311H01L21/3213G03F7/00
Inventor 林思闽
Owner UNITED MICROELECTRONICS CORP
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