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Antenna and semiconductor device having the same

A technology for antennas and radio frequency identification devices, which is applied in the directions of antennas, loop antennas, antenna parts, etc., can solve the problems of current density distribution, magnetic field skew, response frequency, and communication distance, etc., to reduce line length, reduce response distance and response Inhomogeneity of frequency, effect of simple shape

Inactive Publication Date: 2008-07-16
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a loop antenna, the skew of the magnetic field is caused by the uneven distribution of the current density
[0009] As a result, there is a problem that the response frequency and communication distance differ depending on the arrangement position or direction of the semiconductor device capable of wireless information transmission and reception.

Method used

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  • Antenna and semiconductor device having the same
  • Antenna and semiconductor device having the same
  • Antenna and semiconductor device having the same

Examples

Experimental program
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Effect test

Embodiment approach 1

[0047] In this embodiment mode, one mode of the antenna of the present invention will be described with reference to the drawings.

[0048]As shown in FIG. 1 , the antenna shown in the present embodiment includes a substrate 100 , a conductive pattern 101 a , a conductive pattern 101 b , a feeding portion 102 , and a notch portion 103 . That is, the antenna shown in this embodiment has a region where the end of the conductive pattern 101a and the end of the conductive pattern 101b face each other. However, the substrate 100 may not be provided in some cases, and for example, the antenna may be constituted only by the conductive pattern 101a, the conductive pattern 101b, the feeding part 102, and the notch part 103.

[0049] The antenna of this embodiment is used in an electromagnetic induction system. In the electromagnetic induction method, changes in the magnetic field generated in the antenna are converted into electric currents. Therefore, by employing the loop antenna, ...

Embodiment approach 2

[0095] In this embodiment mode, a semiconductor device having the antenna shown in the above-mentioned embodiment mode will be described with reference to FIGS. 7A to 7C . Specifically, a case will be described in which an element layer (also referred to as an IC chip) having elements such as transistors is bonded to the antenna described in the above-mentioned embodiments to provide a semiconductor device. Note that in FIGS. 7A to 7C , FIG. 7B is an enlarged view of the region 120 in FIG. 7A , and FIG. 7C is a cross-sectional view taken along line a-b of FIG. 7B .

[0096] First, conductor patterns 101 a and 101 b serving as antennas, and power feeding portions 102 a and 102 b are formed on a substrate 100 . On the other hand, in addition to forming the antenna, an element layer 126 having elements such as transistors is also formed. As the antenna, any one of the antennas having the structures described in the above-mentioned embodiments may be used. In addition, the eleme...

Embodiment approach 3

[0103] In this embodiment mode, a method of manufacturing the semiconductor device described in Embodiment Mode 2 above will be described with reference to the drawings. Here, a case where an element layer is formed by disposing elements such as transistors on a flexible substrate will be described.

[0104] First, a release layer 702 is formed on one surface of a substrate 701, and then an insulating film 703 and an amorphous semiconductor film 704 (for example, a film containing amorphous silicon) serving as a base are formed (FIG. 8A). Note that the lift-off layer 702, the insulating film 703, and the amorphous semiconductor film 704 may be continuously formed.

[0105] As the substrate 701, a glass substrate, a quartz substrate, a substrate in which an insulating film is formed on one surface of a metal substrate or a stainless steel substrate, a plastic substrate having heat resistance to withstand the processing temperature of this step can be used. Bottom etc. In the ...

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PUM

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Abstract

An antenna for an electromagnetic induction method, in which unevenness in current density distribution is suppressed so that a magnetic field with reduced distortion is generated. In addition, a semiconductor device with less variation in response frequency and communication distance is also provided. The antenna has a loop-like shaped conductive structure with a cut portion in a part thereof and cross-sectional surfaces of the conductive structure face each other in the cut portion. In addition, the conductive structure of the antenna is electrically coupled to have capacity in the cut portion. The semiconductor device has the antenna and an integrated circuit which is connected to the antenna in a power feeding portion.

Description

technical field [0001] The present invention relates to an antenna for transmitting and receiving by using electromagnetic induction, and a semiconductor device having the antenna. Background technique [0002] In recent years, research has developed RFID (Radio Frequency Identification System) and it has been put into practical use. [0003] RFID is a technology between a semiconductor device (also called RFID tag, ID tag, IC tag, IC chip, wireless tag, electronic tag, wireless chip) that can send and receive information wirelessly and a reader Communicate in a non-contact manner to record or read data. [0004] As such RFID communication methods, radio wave methods and electromagnetic induction methods are mainly used (for example, non-patent document 1) [0005] In the radio wave method, electric power and signals are transmitted by using radio waves, and the following frequency band is mainly used: a high-frequency region of 300 MHz to 300 GHz. Compared with the elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q1/38H01Q7/00H01Q23/00H04B5/00
CPCH01Q1/2283H01Q1/38H01Q7/00
Inventor 八洼裕人高缘贵章
Owner SEMICON ENERGY LAB CO LTD
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