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Damage-free ashing process and system for post low-k etch

By using gas chemical processes containing nitrogen, hydrogen and oxygen in the plasma processing system, the problem of dielectric layer damage during the removal of residues after etching low dielectric constant layers by dry plasma processes is solved, achieving non-destructive removal and dielectric constant protection, improving etching selectivity.

Inactive Publication Date: 2008-08-06
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, dry plasmas employ an oxygen-based chemistry; however, conventional oxygen plasmas have been observed to be damaging to low-k layers as described above
As an alternative, chemistries based on nitrogen, hydrogen, and ammonia have been investigated, but these chemistries have been shown to have poor etch selectivity for etch-stop layers below low-k layers
Removal of etch stop layer during plasma ashing can lead to potential semiconductor device damage

Method used

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Embodiment Construction

[0017] In materials processing methods, pattern etching involves applying a thin layer of light-sensitive material (such as photoresist) to the upper surface of a substrate, which is then patterned to provide a means for transferring the pattern during etching. to the underlying film mask. Patterning of a photosensitive material generally involves exposure of a radiation source through a reticle (and associated optics) of the photosensitive material, for example using a microlithography system, followed by removal of the irradiated areas of the photosensitive material with a developing solvent (in positive tone lithography). In the case of photoresists) or unirradiated areas (in the case of negative photoresists).

[0018] For example, as shown in FIGS. 1A-C , an etching mask 6 comprising a photosensitive layer 3 (on which a pattern 2 is formed using conventional photolithography techniques) can be used as a mask for etching the dielectric layer 4 , wherein the mask pattern 2...

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Abstract

A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k material. The process may be configured to remove etch byproducts while preserving feature critical dimension. The ashing process comprises the use of a nitrogen and hydrogen containing chemistry with a passivation chemistry that includes oxygen, such as O2, CO, or CO2, or any combination thereof.

Description

[0001] Cross References to Related Applications [0002] This application is related to the following U.S. applications: U.S. Application No. 10 / 736,782, filed December 17, 2003, entitled "Method and apparatus for bilayer photoresist dry development"; and filed August 14, 2003, entitled "Method and U.S. Application No. 10 / 640,577 for apparatus formultilayer photoresist dry development". The entire contents of all these applications are hereby incorporated by reference in their entirety. This application is based on and claims priority to US Patent Application Serial No. 11 / 195,854, filed August 3,2005. technical field [0003] The present invention relates to methods and systems for removing post-etch residues (post-etch residue) on substrates using dry plasma processes, and more particularly to methods for performing Method and system for non-destructive removal of post-etch residues wherein the low-k layer has a dielectric constant less than SiO 2 the dielectric constant...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302
CPCH01L21/76814H01L21/02063H01L21/3065H01L21/302
Owner TOKYO ELECTRON LTD