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Method for acquiring rough surface of silicon hydride thin film

A technology of hydrogenated silicon and thin film, which is applied in the field of solar photovoltaic equipment, can solve the problems of not having or weakening the "light trap effect", weakly absorbed light cannot produce scattering effect, etc.

Inactive Publication Date: 2008-08-20
BEIJING XINGZHE MULTIMEDIA TECH
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  • Summary
  • Abstract
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Problems solved by technology

However, the TCO front electrode used in actual production does not have satisfactory roughness that refracts light, because the current TCO with high conductivity, high transparency and high surface structure (roughness) is still just exist in the laboratory
So the weakly absorbed light cannot produce a good scattering effect when reflected by the relatively flat back electrode, thus weakening the effect of "light trapping"

Method used

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  • Method for acquiring rough surface of silicon hydride thin film
  • Method for acquiring rough surface of silicon hydride thin film

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Embodiment Construction

[0011] Such as figure 1 As shown, the first step of the present invention is to form an ultra-thin silicon layer 5 containing nanoparticles on the transparent conductive front electrode (such as tin oxide) 2 deposited on the glass substrate 1, and its average thickness does not exceed 15 nanometers. The surface 57 has a structure similar to that of the transparent conductive front electrode 2. The inducing layer is formed using PECVD under conditions including the following parameters: the substrate temperature does not exceed 200°C, and the power density of DC or AC excitation is not less than 100mW / cm 2 , Use silane as the main source gas mixture, the pressure in the reaction chamber is not less than 1mbar, the distance between positive and negative parallel electrodes is not less than 1.5 cm, and the deposition time is not more than 25 seconds. Subsequently, the second step is to use the usual PECVD method on the inducing layer to obtain one or several p-i-n photovoltaic units...

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Abstract

The present invention discloses a method for enhancing light absorption of film silicon photovoltaic devices. Firstly, depositing a ultra-thin silicon layer containing nano granules on substrate to make the surface of photovoltaic conversion layer based on hydrogenated Si film generated by plasma enhanced chemical vapor deposition has evident roughness, so the long wave light is reflected to photovoltaic conversion layer by back electrode by big angle dispersion type, and the light current and photoelectric conversion efficiency are enhanced.

Description

Technical field [0001] The invention belongs to the field of solar photovoltaic equipment, and particularly relates to the manufacturing technology of photovoltaic devices based on thin film silicon. Background technique [0002] In recent years, the development of photovoltaic cells and large-area photovoltaic modules has attracted widespread attention from the world. In particular, hydrogenated amorphous silicon and nanocrystalline silicon have shown great potential with the widespread application of photovoltaic devices in commercial and residential facilities. A significant feature of the production of thin-film silicon photovoltaic devices at lower temperatures below 260°C is that large-area deposited silicon-related semiconductor films and electrical contact films have excellent performance. At the same time, by using well-developed coating equipment and procedures, low-cost templates can be manufactured industrially. The laser scribing process of different thin films appli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/075H01L31/042H01L31/0236H01L31/20H01L31/046
CPCY02E10/52Y02E10/548Y02P70/50
Inventor 李沅民马昕
Owner BEIJING XINGZHE MULTIMEDIA TECH