Semiconductor structure and its manufacture method

Abstract

An integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; a conductive wiring in the dielectric layer; and a metal carbide cap layer over the conductive wiring.

Description

technical field [0001] The present invention relates to integrated circuits, and more particularly to an interconnect structure and method for making the same. Background technique [0002] The damascene process has been widely used in the fabrication of metal lines and dielectric plugs in integrated circuits. The damascene process includes forming an opening in the IMD layer by conventional developing and etching processes, and then filling the opening with copper or copper alloy. After the excess metal material on the dielectric layer is removed by chemical mechanical polishing (CMP), the remaining copper or copper alloy can be used as a metal line and / or a dielectric layer plug. [0003] Copper has replaced aluminum as the primary wire material due to its lower electrical resistance. However, as the size of semiconductors continues to shrink and the current density increases, copper still has reliability problems of electro migration and stress migration. [0004] fig...

AI Technical Summary

Problems solved by technology

These chemicals and oxygen can easily attack the copper wire 4 and the metal cap layer 8, and cause the contact resistance between the copper wire 4 and the via layer plug (not shown) thereon to increase.

This will result in a decrease in production

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