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Plasma processing device

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems of destroying the lattice integrity of the polished surface, polluting the polished surface, sub-surface damage, etc., and achieves good polishing effect, control uniformity, and lattice integrity. Effect

Inactive Publication Date: 2008-10-22
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a plasma processing device to solve the problem that foreign elements will be introduced into the polishing surface in the prior art, which will pollute the polishing surface, and will destroy the lattice integrity of the polishing surface due to the adsorption of reactive gas elements on the polishing surface. Problems prone to subsurface damage

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Polishing rate experiment of quartz glass:

[0023] Step 1: The quartz workpiece to be polished is cleaned, and the standard RCE process is mainly used for cleaning. Open the vacuum chamber and place the workpiece on the workpiece table; use the exhaust system to reduce the vacuum in the vacuum chamber to 10 -3 Pa.

[0024] Step 2: Fill in the working gas, argon (10%~90%), oxygen (0%~90%) sulfur hexafluoride (1%~90%), and the vacuum degree reaches between 0.1Pa~100Pa; turn on the radio frequency Power supply for components, adjustable between 10 watts and 200 watts.

[0025] Step 3: Adjust the size and position of the magnetic field, and process and obtain two samples under the conditions of no magnetic field and applied magnetic field respectively.

[0026] Step 4: Process for about 1 hour, turn off the power, and turn off the working gas. Take out the workpiece, and test the surface roughness and etching depth of the workpiece.

[0027] Comparing the two processe...

Embodiment 2

[0029] Step 1: The quartz workpiece to be polished is cleaned, and the standard RCE process is mainly used for cleaning. Open the vacuum chamber and place the workpiece on the workpiece table; use the exhaust system to reduce the vacuum in the vacuum chamber to 10 -3 Pa.

[0030] Step 2: Fill in the working gas, argon (10%~90%), oxygen (0%~90%) sulfur hexafluoride (1%~90%), and the vacuum degree reaches between 0.1Pa~100Pa; turn on the radio frequency Power supply for components, adjustable between 10 watts and 200 watts.

[0031] Step 3: Fix the magnetic field position. The magnetic field strengths were adjusted to be 200 mTesla, 400 mTesla, and 600 mTesla respectively, and 3 samples were processed respectively.

[0032] Step 4: The processing is the same (1 hour), turn off the power, and turn off the working gas. Take out the workpiece, test the surface roughness and etching depth of the workpiece respectively, and calculate the etching rate.

[0033] The results show t...

Embodiment 3

[0035] Step 1: The quartz workpiece to be polished is cleaned, and the standard RCE process is mainly used for cleaning. Open the vacuum chamber and place the workpiece on the workpiece table; use the exhaust system to reduce the vacuum in the vacuum chamber to 10 -3 Pa.

[0036] Step 2: Fill in the working gas, argon (10%~90%), oxygen (0%~90%) sulfur hexafluoride (1%~90%), and the vacuum degree is between 0.1Pa~100Pa; open Power supply for RF components, regulated between 10 watts and 200 watts.

[0037] Step 3: Fix the position and size of the magnetic field, and use homogenizers without conicity (three).

[0038] Step 4: The processing time is the same (1 hour), three samples are processed under three different conic degrees, the radio frequency power supply is turned off, the working gas is turned off, and the workpiece is taken out.

[0039] Take multiple points on each workpiece to test the etching depth to reflect the uniformity of the plasma on the working surface. ...

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Abstract

The invention relates to the technical field of non-contact polishing and particularly relates to a plasma processing device, which aims at solving the problems that in the prior art, a polished surface is polluted by extraneous elements introduced to the polished surface and reaction gas elements absorbed on the polished surface results in damage to the completeness of crystal lattice on the polished surface and easy damage to a subsurface. In order to solve the problems in the prior art, the technical proposal which is provided is: the plasma processing device comprises a workroom and a capacity coupling plasma generator which is internally arranged in the workroom. The capacity coupling plasma generator comprises an air intake, a radio frequency connector and an inner bushing. The workroom is a vacuum chamber and the outside of the inner bushing of the capacity coupling plasma generator is provided with an insulating layer and a shielding layer in sequence. The inner bushing, the insulating layer and the shielding layer are connected in an interference fit way. The outer side of the shielding layer is surrounded with an annular magnet and the annular magnet is linked on the shielding layer by a linear moving mechanism.

Description

Technical field: [0001] The invention relates to the technical field of non-contact polishing, in particular to a plasma processing device. Background technique: [0002] Plasma polishing technology is a new technology combining plasma source and chemical vapor treatment equipment, which belongs to non-contact polishing technology. Its working principle is based on the chemical reaction under the action of plasma, and the material is removed by chemical action between the plasma and the surface material of the workpiece. This method can be used for large-area flat polishing, local polishing, aspheric polishing, etc. Using this method to polish optical parts can avoid the appearance of subsurface damage layer, improve the surface processing level of optical parts, and realize high-precision polishing. [0003] Plasma processing equipment is used in plasma polishing technology, and its main components include: working chamber, capacitively coupled plasma generator, workpiece...

Claims

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Application Information

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IPC IPC(8): C03C23/00
Inventor 刘为国梁海锋杭凌侠
Owner XIAN TECHNOLOGICAL UNIV
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