Directional solidification method and its device for continuous production for polycrystalline silicon ingot
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JACO SOLAR SILICON LONGYAN CO LTD
- Publication Date
- 2008-11-19
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a uniform polycrystalline material with a certain structure characterized by material or shape, in particular to a directional solidification method and equipment for continuously producing polycrystalline silicon ingots during the process of producing solar-grade polycrystalline silicon from metal silicon by metallurgy. Background technique
[0002] At present, solar energy has become the most concerned green energy, and polysilicon is currently the most widely used solar cell material. The preparation process of cast polysilicon ingots has two methods in principle: one is to melt polysilicon in a crucible, and then exchange heat through the bottom of the crucible to cool the crystal, that is, the heat exchange method; the other is to melt the polysilicon in a crucible. The polysilicon is melted and then poured into another crucible to cool.
[0003] Internationally famous polysilicon manufacturers such as Japan’s Jingtao, Ge...