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Silicon with three-dimensional depression structure and method for preparing same

A sunken structure, three-dimensional technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of unreported preparation methods, and achieve the effect of cheap raw materials, simple preparation steps, and smooth appearance

Inactive Publication Date: 2008-11-26
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the preparation method of this inverted roof structure of silicon has not been reported yet.

Method used

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  • Silicon with three-dimensional depression structure and method for preparing same
  • Silicon with three-dimensional depression structure and method for preparing same
  • Silicon with three-dimensional depression structure and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] In this embodiment, the reaction raw materials used are 10mm×10mm silicon wafer (001 plane) and chemically pure metal zinc powder.

[0028] Firstly, the silicon wafer is cleaned by Pilar method to remove the oxide layer on the surface and impurities adsorbed on the surface. The size of the silicon wafer is generally cut into 10mm×10mm.

[0029] Put 0.8-1g of zinc powder in the quartz boat and place it in the center of the tube heating furnace. In addition, a quartz boat with 3-4 silicon wafers facing upwards was placed on the downwind port 10 cm away from the center of the tube-type heating furnace.

[0030] After the sample is loaded into the tube-type heating furnace and sealed completely, the mechanical pump is turned on to pump air, so that the pressure in the tube is less than 0.1MPa. Then argon gas is introduced to make the pressure in the furnace reach about 0.4MPa. and maintain this pressure. During this process, the mechanical pump has been working to achie...

Embodiment 2

[0035] In this embodiment, the maximum temperature is set above 1300° C., and other conditions are the same as in Embodiment 1, and the inverted roof and inverted pyramid structures obtained on the silicon wafer are not complete.

Embodiment 3

[0037] In this embodiment, the silicon wafer is not covered or thermally evaporated and deposited with zinc powder, other conditions are the same as in the first embodiment, only the silicon wafer is heated, and finally no three-dimensional structure of silicon can be obtained.

[0038] It can be seen from the above three examples that as long as the metal zinc powder and the silicon sheet react at an appropriate temperature, silicon with a three-dimensional concave structure will be obtained. Other parameters, such as maximum temperature, pressure and holding time also affect the growth of the three-dimensional structure of silicon. Wherein, those skilled in the art can understand that the amount of zinc powder used and the size of the silicon wafer are determined according to the heating equipment, and are not limited to the scope given by the embodiment of the present invention.

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Abstract

The invention discloses silicon with a three-dimensional sunken structure and a preparation method thereof, which belongs to the field of semiconductor material and preparation thereof. A three-dimensional structure of the silicon with a three-dimensional sunken structure of the invention has an outline that is similar to a reversed roof, namely, a rectangular superface, two pairs of same sized triangles and trapezoids shaped sides, wherein, the length of the rectangular superface is equal to the sum of the length of a reversed roof-shaped ridge and the width of the rectangular superface; particularly, when the length of the reversed roof-shaped ridge is zero, the reversed roof is degraded to the shape of a reversed pyramid. Meanwhile, the invention provides a method for preparing the silicon with the three-dimensional sunken structure by a vapor deposition method. Compared with the prior art, the invention has the advantages that raw material of the preparation is very cheap; the preparing procedures are simple and easy to be repeated; the preparation parameter is easy to control; the pattern of a generated product is neat; the crystallization is good; a regular three-dimensional solid structure is provided.

Description

technical field [0001] The invention relates to silicon with a three-dimensional concave structure and a preparation method thereof, belonging to the field of semiconductor materials and preparation thereof. Background technique [0002] Nanomaterials with special structures and their novel properties have become a research hotspot. Many physical phenomena of these materials have been predicted and confirmed. The growth of three-dimensional structures on silicon surfaces is also the focus of recent research. This three-dimensional structure obtained by self-assembly growth has important application prospects in fields such as optoelectronic devices. [0003] Silicon is one of the most important materials in semiconductor technology, and it is of great significance to grow nano or micro structures on silicon. The three-dimensional structure involved in the present invention has an appearance similar to an inverted roof, and can be used as a container or template for second...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B29/60
Inventor 奚中和吴越张耿民崔宏宇郭等柱
Owner PEKING UNIV
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