Method for preparing rare earth doped transparent halide glass host material

A halide and transparent technology, applied in the field of three-dimensional optical storage materials, can solve the problem that phase-splitting glass is easily affected by external preparation conditions, and achieve the effects of excellent mechanical strength, reduced OH- content, rapid heating and cooling

Inactive Publication Date: 2008-12-10
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a rare earth-doped transparent halide phase-separated glass matrix material for three-dimensional optical information storage of femtosecond laser writing, to realize information writing through femtosecond laser action, and to overcome rare earth doping The shortcomings of transparent halide phase-separated glass are easily affected by external preparation conditions

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Step 1: The percentage of massager is 39AlF 3 -49.9MgF 2 -1BaCl 2 -10YF 3 -0.1SmF 3 , Weigh the component AlF in the glove box (Sekisui Machinery Company, MDB-2BL type) 3 , MgF 2 , BaCl 2 , YF 3 And SmF 3 , The purity of the above raw materials is not less than 99.95%, the purity of the above raw materials is not less than 99.95%, and the above components are fully mixed and placed in a graphite crucible. Before and during the operation of the sample, the glove box Vacuum, where the vacuum degree of the glove box body is not higher than 1×10 -1 Torr, the vacuum degree of the side box is not higher than 5×10 -2 Torr, the oxygen is below 100ppb, and the moisture value is below 1.47ppb, and then the glove box is filled with argon at the same pressure as the surrounding atmospheric pressure.

[0025] Step 2: Put the charged graphite crucible in the aforementioned glove box, put it into a small high-frequency induction heating device (Miwa Manufacturing Co., Ltd., MU-1700C, Japa...

Embodiment 2

[0027] Step 1: The percentage of massager is 35AlF 3 -49.5MgF 2 -8BaCl 2 -2MgBr 2 -5YF 3 -0.5TbF 3, Weigh the component AlF in the glove box (Sekisui Machinery Company, MDB-2BL type) 3 , MgF 2 , BaCl 2 , MgBr 2 , YF 3 , TbF 3 , The purity of the above raw materials is not less than 99.95%, and the above components are fully mixed and placed in a graphite crucible. Before and during the operation of the sample, the glove box is first vacuumed, and the vacuum of the glove box body Not higher than 1×10 -1 Torr, the vacuum degree of the side box is not higher than 5×10 -2 Torr, oxygen is below 100ppb, and moisture value is below 1.47ppb, and then fill the glove box with argon at the same pressure as the surrounding atmospheric pressure.

[0028] Step 2: Put the charged graphite crucible in the aforementioned glove box, put it into a small high-frequency induction heating device (Japan Miwa Manufacturing Co., Ltd., MU-1700C), and quickly raise the temperature to 900°C while in the heat...

Embodiment 3

[0030] Step 1: The percentage of massage is 40AlF 3 -24MgF 2 -15SrBr 2 -20YF 3 -1 EuF 3 , Weigh the component AlF in the glove box (Sekisui Machinery Company, MDB-2BL type) 3 , MgF 2 , SrBr 2 , YF 3 And EuF 3 , The purity of the above raw materials is not less than 99.95%, and the above components are fully mixed and placed in a graphite crucible. Before and during the operation of the sample, the glove box is first vacuumed, and the vacuum of the glove box body Not higher than 1×10 -1 Torr, the vacuum degree of the side box is not higher than 5×10 -2 Torr, oxygen is below 100ppb, and moisture value is below 1.47ppb, and then the glove box is filled with nitrogen at the same pressure as the surrounding atmospheric pressure.

[0031] Step 2: Place the charged graphite crucible in the aforementioned glove box, put it into a small high-frequency induction heating device (Japan Miwa Manufacturing Co., Ltd., MU-1700C), and quickly raise the temperature to 950°C while in the heating cav...

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PUM

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Abstract

The invention provides rare earth doped transparent halide glass used for three-dimensional optical data storage and a preparation method thereof. The invention is characterized in that the glass comprises the following compositions in mol percentage: 25 to 40 percent of AlF3, 5 to 65 percent of MF2, 1 to 15 percent of MX2, 10 to 20 percent of YF3, and 0.1 to 1 percent of ReF3, wherein, M represents one or a plurality of divalent alkaline earth ions of Mg<2+>, Ba<2+> and Sr<2+>; X is one or two kinds of ions of Br<-> and Cl <->; and Re is one or a plurality of trivalent rare earth ions of Sm<3+>, Tb<3+>, Eu<3+> and Ce<3+>. The transparent halide glass can be prepared after the compositions are melted in a high-frequency electric furnace for 10 to 45 minutes at a temperature of between 800 and 1,000 DEG C and are cooled under an atmosphere protection of chlorine or inert gas. The rare earth doped transparent halide glass reduces the threshold value of rare earth ion valence variation energy under the action of femtosecond laser in a glass medium, is more beneficial for information writing of the femtosecond laser, and reduces the absorption of an infrared band optical signal of a glass material, thereby having better illumination intensity.

Description

Technical field [0001] The invention relates to the technical field of three-dimensional optical storage materials in information technology, in particular to the preparation of a rare-earth-doped transparent halide phase-separated glass matrix material for three-dimensional optical storage of femtosecond laser writing and reading in a transparent medium method. technical background [0002] Due to the narrow pulse width, the femtosecond laser can absorb laser energy in the material and finally transfer it to the crystal lattice in the characteristic time in the form of heat energy. It can inject energy into the material with a high degree of spatial selection in the area, and achieve little thermal influence. Ultra-fine processing of materials difficult to achieve with nanosecond and picosecond lasers. At the same time, even if the material itself does not have intrinsic absorption at the laser wavelength, due to the ultra-high electric field intensity near the focal point of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C3/32
Inventor 邱建备宋志国黄文静
Owner KUNMING UNIV OF SCI & TECH
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