Method for preparing dish shaped large-crystal domain polysilicon with nickel solution fogdrop, product and application thereof
A polysilicon and nickel solution technology, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of poor stability and repeatability of the dipping process, affecting the performance of polysilicon grain size, etc. Inexpensive and simple process
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Embodiment 1
[0064] 1) On a glass substrate 101 (such as Corning 1737), a low-temperature oxide buffer layer 102 with a thickness of 300 nm is deposited by low-pressure chemical vapor deposition (LPCVD).
[0065] 2) Depositing a 30 nm thick amorphous silicon film 103 on the low temperature oxide buffer layer 102 by using low pressure chemical vapor deposition (LPCVD).
[0066] 3) Using 1% HF acid to remove the natural oxide layer on the surface of the amorphous silicon film 103, taking the hydrophobicity of the surface of the amorphous silicon film 103 as a standard, blowing dry with nitrogen gas, and then quickly enter the spraying process of the nickel solution.
[0067] 4), prepare 1ppm nickel acetate aqueous solution, adopt ammonia water to adjust the pH value of this nickel acetate aqueous solution to 6. Pack into the nickel solution bottle 204.
[0068] 5) The amorphous silicon thin film 103 is placed on the bottom of the sealed chamber 201 facing upward. The pressure nitrogen is c...
Embodiment 2
[0072] 1) On a glass substrate 101 (such as Corning 1737), a low-temperature oxide buffer layer 102 with a thickness of 300 nm is deposited by low-pressure chemical vapor deposition (LPCVD).
[0073] 2) On the low temperature oxide buffer layer 102, deposit an amorphous silicon thin film 103 with a thickness of 100 nm by low pressure chemical vapor deposition (LPCVD).
[0074] 3) Using 1% HF acid to remove the natural oxide layer on the surface of the amorphous silicon film 103, taking the hydrophobicity of the surface of the amorphous silicon film 103 as a standard, blowing dry with nitrogen gas, and then quickly enter the spraying process of the nickel solution.
[0075] 4), prepare 10ppm nickel nitrate aqueous solution, adopt tetramethylammonium hydroxide to adjust the pH value of this nickel nitrate aqueous solution to 8. Pack into the nickel solution bottle 204.
[0076] 5) The amorphous silicon thin film 103 is placed on the bottom of the sealed chamber 201 facing upwar...
Embodiment 3
[0080] 1) On a glass substrate 101 (such as Corning 1737), a low-temperature oxide buffer layer 102 with a thickness of 300 nm is deposited by low-pressure chemical vapor deposition (LPCVD).
[0081] 2) On the low temperature oxide buffer layer 102, deposit an amorphous silicon thin film 103 with a thickness of 30 nm by low pressure chemical vapor deposition (LPCVD).
[0082] 3) Using 1% HF acid to remove the natural oxide layer on the surface of the amorphous silicon film 103, taking the hydrophobicity of the surface of the amorphous silicon film 103 as a standard, blowing dry with nitrogen gas, and then quickly enter the spraying process of the nickel solution.
[0083] 4), prepare 100ppm nickel chloride aqueous solution, adopt ammonia water to adjust the pH value of this nickel chloride aqueous solution to 9. Pack into the nickel solution bottle 204.
[0084] 5) The amorphous silicon thin film 103 is placed on the bottom of the sealed chamber 201 facing upward. The pressu...
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Abstract
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