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Laser fuse device capable of reprogramming and method for continuously regulating resistance of fuse wire

A fuse resistance and reprogramming technology, which is applied in the manufacture of electrical solid state devices, semiconductor devices, semiconductor/solid state devices, etc., can solve problems such as fuse rupture and fuse residue, and achieve the effect of continuously adjustable resistance

Inactive Publication Date: 2008-12-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this kind of laser fuse is that it can only be programmed and repaired once (because the blown fuse cannot be reconnected), and the burning process of the fuse will bring two potential hidden dangers to the integrated circuit: one It is the remaining residue at the bottom of the fuse, and the second is the rupture of the lower corner of the fuse
Both will have a certain negative impact on the integrated circuit

Method used

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  • Laser fuse device capable of reprogramming and method for continuously regulating resistance of fuse wire
  • Laser fuse device capable of reprogramming and method for continuously regulating resistance of fuse wire
  • Laser fuse device capable of reprogramming and method for continuously regulating resistance of fuse wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1. The memory structure is manufactured by CMOS technology, and the phase change material SiSb (silicon content is 40at.%) with excellent data retention ability is deposited on the metal layer of the circuit to be repaired, with a thickness of 300nm. This material is not only compatible with standard The CMOS process is compatible and has excellent data retention capabilities. The crystallization temperature exceeds 300°C, and it will not be affected by the high temperature in the later process (such as packaging).

[0024] 2. Using optical exposure and reactive ion etching to form a SiSb laser fuse with a length of 5 microns and a width of 2 microns.

[0025] 3. Deposit a silicon oxide layer with a thickness of 1 micron, and open a window above the SiSb laser fuse, which is used for laser irradiation, and the silicon oxide layer covering the fuse in the window is 200nm. The cross-sectional schematic diagram of the obtained fuse structure is shown in figure 2 As shown...

Embodiment 2

[0029] For the continuous resistance adjustment operation of the phase change material fuse, the phase change material used is GeSbTe. Here, the four-state resistance adjustment is used to illustrate the continuous adjustment method.

[0030] 1. When the fuse GeSbTe in the initial state has an amorphous structure, the amorphous structure is marked as 10a in the figure, and the cross-sectional schematic diagram of the device is shown in Figure 4a as shown, Figure 4b shown as Figure 4a In the projection taken along the A-A direction, when the GeSbTe fuse is an amorphous structure, the resistance between the left and right metal wires 2a and 2b is R 0 .

[0031] 2. Use a pulsed laser with a smaller beam spot to heat the phase-change material fuse, so that the temperature of the material in the heated part rises above the crystallization temperature, so the material region in the irradiated part crystallizes to form a crystalline region 10c, Such as Figure 4c As shown, the...

Embodiment 3

[0037] When the initial state is a phase change material in a crystalline state, the programming from a low-resistance state to a high-resistance state (amorphous state) of the fuse can be transformed into an amorphous state through a quenching process through a stronger energy laser irradiation . Just the opposite of the situation in Example 2.

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Abstract

The invention relates to a reprogrammable laser fuse device used for an integrated circuit and a method for continuously adjusting fuse resistance, and is characterized by realizing adjustment of an integrated circuit by non-destructively changing the fuse resistance: phase-change materials are adopted for replacing the traditional metal wires to be used as fuses; laser is utilized to realize reversible transformation operation to the phase-change materials so as to realize reversible change of the resistance of a programmed fuse between high resistance and low resistance. The reprogrammable laser fuse device of the invention has the advantages that the resistance of the fuse is continuously adjustable so as to realize the accurate or multimode control and regulation of the integrated circuit by continuously adjusting the fuse resistance. The invention also relates to a method for continuously adjusting the resistance of a phrase-change material fuse.

Description

technical field [0001] The invention relates to a reprogrammable laser fuse device for integrated circuits and a method for continuously adjusting the fuse resistance, belonging to the field of semiconductor integrated circuits. Background technique [0002] Post-manufacture repair of logic and memory circuits using programmable laser fuses is a common practice in the semiconductor industry. In the manufacturing process of integrated circuit devices, the defective units in the inspected products need to be repaired by fuse technology, so as to improve the yield of products. There are two main types of fuse technology commonly used at present: one is to use laser to program the fuse destructively (burn the fuse), and the other is to use electrical signals to program (including destructive and non-destructive) . [0003] The laser fuse material used initially was polysilicon, and then the metal fuse became the mainstream. At present, the widely used metal fuse is mainly meta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/525H01L21/768
Inventor 张挺宋志棠刘波封松林陈邦明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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