Phase-changing storage device and manufacture method thereof

A technology of phase change memory and manufacturing method, applied in static memory, digital memory information, information storage and other directions, can solve problems such as insufficient filling of gaps and insufficient filling

Active Publication Date: 2009-01-28
PROMOS TECH INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there may be a problem that the hole size is too small to fill the bottom or the

Method used

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  • Phase-changing storage device and manufacture method thereof
  • Phase-changing storage device and manufacture method thereof
  • Phase-changing storage device and manufacture method thereof

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Example

[0048] first embodiment

[0049] Please refer to Figure 2a , which shows the top view of the manufacturing process of the phase change memory device according to the first embodiment of the present invention; please refer to Figure 2b , which shows a cross-sectional view of the manufacturing process of the phase change memory device according to the first embodiment of the present invention. A substrate 300 is provided, and the substrate 300 is a silicon substrate. In other embodiments, silicon germanium (SiGe), bulk semiconductor, strained semiconductor, compound semiconductor, silicon on insulator (SOI) or Other commonly used semiconductor substrates. The substrate 300 may also be a substrate including electronic components including transistors, diodes, bipolar junction transistors (BJTs), resistors, capacitors, inductors, and the like. Next, for example, physical vapor deposition (PVD), sputtering, low pressure chemical vapor deposition (LPCVD) and atomic layer chemi...

Example

[0068] Second Embodiment

[0069] Please refer to Figure 16a and 16b , which shows the formation of the cup-shaped opening 318 in the second embodiment of the present invention, wherein the element is Figure 2a , 2b For the same parts shown in ~6a and 6b, reference may be made to the previous related descriptions, and the repeated descriptions are not repeated here. use Figure 6a , 6b Hard mask layer 310a and photoresist layer 316 are shown as etch hard masks, and an anisotropic etch step is performed to remove portions of dielectric layer 304 until switching element 308 is exposed. Next, the photoresist layer 316 may be removed using a PR stripping process such as photoresist asher. Then, the hard mask layer 310 a may be removed by dry etching or wet etching to form a cup-shaped opening 318 , the bottom of which is overlapped and aligned above the switching element 308 . In the embodiment of the present invention, the etching selectivity ratio of the hard mask layer...

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Abstract

The invention provides a phase transition storage device, comprising a substrate, an electrode layer, a phase transition storage structure. The electrode layer is formed on the substrate, the phase transition storage structure is formed on the electrode layer and is electrically connected to the electrode layer, wherein the phase transition storage structure comprises a cup-shaped heating electrode, an insulating layer, an electrode structure and a pair of double-layer clearance walls, wherein the cup-shaped heating electrode is arranged on the electrode layer; the insolating layer is arranged on the cup-shaped heating electrode along the first direction and partly covers on the cup-shaped heating electrode; the electrode structure is arranged on the cup-shaped heating electrode along the second direction, and partly covers on the insolating layer and the cup-shaped heating electrode; the pair of the double-layer clearance walls is arranged on a pair of side walls, and partly covers on the cup-shaped heating electrode; and the double-layer clearance walls comprise a clearance wall made of a phase transition material and a clearance wall made of an insolating material.

Description

technical field [0001] The invention relates to a phase-change memory device, in particular to a phase-change memory device with high storage density. Background technique [0002] Phase change memory (PCM) is an important candidate element for 64MB next-generation stand-alone non-volatile memory. How the element structure can produce the best element electrothermal characteristics will determine whether phase change memory can replace Flash memory (flash memory) has become an important research and development direction of the mainstream. However, how to use the same memory semiconductor manufacturing technology to produce a non-volatile memory with higher memory density is an important development direction. [0003] Such as Figure 1a As shown, the patent (US 6,501,111) of INTEL Corporation of the United States uses a cup-shaped heating electrode (Cup-Shaped Bottom Electrode) 206 as a main body to realize a three-dimensional phase-change memory device (three-dimensional ...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24G11C11/56
Inventor 陈维恕陈颐承许宏辉李乾铭赵得胜陈志伟蔡铭进
Owner PROMOS TECH INC
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