Method for preparing nano CMOS integrated circuit by micro process

An integrated circuit, micron-scale technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of rising production costs, restricting the development of the semiconductor industry, waste of resources and energy, etc., to improve manufacturing capacity and achieve leapfrogging development, the effect of small conduction channel
CN101359626BInactive Publication Date: 2010-06-02XIDIAN UNIV

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
XIDIAN UNIV
Publication Date
2010-06-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for fabricating a nano-scale CMOS integrated circuit based on micron-scale processing technique. The method includes the following steps: fabricating an N / P well and growing a Poly-Si / SiN / Poly-Si multi-layer structure on the N / P well; etching the top layer of Poly-Si into a window and then depositing a layer of SiO2; etching the SiO2layer on the surface, except the SiO2 at the side of the window; based on the etching ratio of Poly-Si to SiN(11:1), etching the Poly-Si on the upper layer; based on the etching ratio of SiN to SiO2 (2:1), etching the SiN outside the protective area on the side wall of SiO2; based on the etching ratio of Poly-Si to SiO2(50:1), etching the Poly-Si outside the protective area on the side wall of SiO2 so as to form an n / p MOSFET grid; injecting ions, self-aligning, and forming the source area and the drain area of the n / p MOSFET grid so as to form an n / p MOSFET device; and photoetching interconnection lines of the device so asto form a CMOS integrated circuit with a conducting channel at 45-90nanometer. The invention can fabricate a CMOS integrated circuit which is improved in performance by 3-5 generations on a micron-scale Si integrated circuit processing platform without adding any funds and equipment investment.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a method for manufacturing nanoscale Si integrated circuits by using the existing micron-scale Si integrated circuit manufacturing process. Background technique

[0002] Information technology is the core technology of the national economy. It serves all fields of the national economy. Microelectronics technology is the key to information technology, and integrated circuits are the key among the keys. Since the advent of integrated circuits in 1958, they have developed at an astonishing speed. They have become the core of information science and technology, the cornerstone of national economic development and national defense construction, and have had a huge impact on world politics, economy and culture. As the fastest-growing, most influential, and most widely used technology in human history, integrated circuits have become an important in...

Claims

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