52results about How to "Achieve leapfrog development" patented technology

The invention provides a realization method for a multilevel intelligent multifunctional multimedia information interaction system. The method comprises the steps of: (1) framing a multilevel information interaction system; (2) configuring system management layers, intermediate operation layers and terminal layers for the multilevel information interaction system; (3) using a B/S and C/S composite structure application network, and using a B/S application structure between the system management layers, in the system management layers and in the terminal layers and using the C/S application structure in the intermediate operation layers and in the terminal layers; (4) installing information interaction system software for the system servers of the management layers and the intermediate operation layers, installing information interaction user terminal software at user terminals; (5) using a rapid cache structure for information interaction between system servers of the intermediate operation layers and of the user terminals; (6) configuring for the system A-type user terminals by connecting a security network through a wireless communication platform and B-type user terminals without connecting the security network; (7) carrying out user terminal identity authentication and real-time registration; (8) carrying out user terminal information downloading to confirm file fingerprint; and (9) constructing a perfect education evaluation system in the system. The realization method for a multilevel intelligent multifunctional multimedia information interaction system has characteristics of a wide application scope, a low hardware cost, interactive information intelligent multifunction, and a real-time transmission, and the method is conducive to comprehensively popularize the education system and promote a steady development of a new audio-visual industry.

The invention discloses an internet of things (IOT)-based visualization system for working conditions of electric forklifts. The system comprises a data obtaining module, a data preprocessing module,a data storing module, a chart drawing module and an interacting and displaying module. According to the system disclosed by the invention, the speed and the positions of the forklifts and the weightof transported goods are displayed in real time in a background dispatching center according to IOT data of operation states of the forklifts, which are transmitted to a server by a gateway; visual charts such as maps, columns, broken lines and the like of the use efficiency of the forklifts, the remaining amount of batteries, the speed change curves of the forklifts, the total traveling distancerecords and the like of every day, every week and every month are generated and displayed in real time by using the processed data; managers can master the working conditions of the forklifts in realtime and switch among different views according to the needs to comprehensively judge the working efficiency of the forklifts, predict and analyze the service life states of the forklifts and reasonably select allocating and scheduling schemes of tasks according to the workshop operation requirements; and therefore, finally, the service efficiency of the forklifts and the warehouse work efficiencyare improved and the service life of the forklifts is prolonged.

The invention relates to an individualized biomimetic dental implant and a manufacture method thereof. The invention is characterized in that the dental implant comprises an implant body for imitating the original tooth root tissue structure of a patient's missing tooth and also comprises a biomimetic artificial alveolar bone structure outer-layer for imitating a patient's alveolar bone tissue structure. The biomimetic artificial alveolar bone structure outer-layer and the external surface of the implant body are combined as a whole. The biomimetic tooth root implant body's outer layer is a 3D printed biomimetic artificial alveolar bone structure outer-layer which is combined with the implant body to form a whole structure, and is similar to the tissue structures of missing tooth's original tooth root and alveolar bone. Thus, the invention provides an ideal implementation scheme of a biomimetic artificial tooth root structure. What is the most important is that the invention provides a structure which is beneficial to bone marrow stem cell and osteogenesis-related cell adhesion, proliferation and mineralization and gives play to final osteogenic function and has good bioactivity. Therefore, a microenvironment for promoting osteogenesis is created, osteocyte generation is induced, and early rapid and firm synosteosis is realized.

The invention relates to paint for a surface coating of a section, in particular to acrylic ester modified high weather resistance paint and a preparation method thereof. The paint consists of the following raw materials in weight portion: 16 to 70 portions of matrix resin, 10 to 55 portions of active diluent, 9 to 50 portions of solvent, 0.3 to 0.8 portion of foam suppressor, 4 to 10 portions of light initiator, 3.5 to 8 portions of anti-wear additive, 0.4 to 1 portion of flatting agent, 0.4 to 1.2 portions of dispersing agent, and proper amount of pigment. The paint improves the quality of a PVC plastic colorful section and enlarges the application range of the material. The method reasonably prepares the acrylic ester modified high weather resistance paint used on the surface of the section by using a unique acrylic ester modified high weather resistance paint formulation. The invention provides the acrylic ester modified high weather resistance paint with new formulation to solve the problems of poor weather resisting property of the product and poor adhesive force of the paint during stamping after the product is stamped. The application of the paint successfully realizes high quality and high taste of the colorful section, and realizes technical renovation and great-leap-forward development of the industry of PVC colorful section.

The invention discloses a method for making leaf vegetable pickled vegetable by a dry ice quick-frozen forward/back high pressure broth repeated penetration process. The method is characterized in that a process of separation and air drying of stalk and leaves and a dry ice quick-frozen process are employed for pretreating the leaf vegetable raw material, the leaf vegetable raw material is stored in a freezer at the temperature of -18 DEG C, after a broth is prepared, the forward/back high pressure repeated penetration process is employed for rapidly making the Szechwan leaf vegetable pickled vegetable having a traditional fermentation local flavor. According to the process provided in the invention, the leaf vegetable pickled vegetable raw material can reach the purpose of long-term storage without high salinity pickling, salt amount is reduced by 30%-35%, the content of nitrite is reduced by 90%-95%, no high salinity waste water is discharged, the production efficiency is increased by more than 300%, the serialization, automation, standardization and large scale production of Szechwan pickled vegetable can be realized, and the method provided in the invention has a landmark innovation revolution to a traditional production mode to the Szechwan pickled vegetable.

The invention discloses a reproduction method for lilium davidii unicoior cotton and belongs to the technical field of plant cultivation. The reproduction method is characterized by comprising the steps of selecting and soaking scales in a benomyl or captan aqueous solution for 30min for sterilization, fishing out and airing the scales, and spreading the scales on a seedbed for seedling culture; selecting the seedbed with soil with the pH of the 5.8-7.8, enabling bases of the scales to be downward during spreading, enabling the planting distance to be 10*3cm, slighting exposing tops of the scales, covering the seedbed with grass for sun shielding, insulation and moistening, and keeping the seedbed at the temperature of about 20DEG C after spreading. The reproduction method has the advantages that the method plays a decisive promoting role in improving quality of peasants and booming social culture in rural areas; the lily industry has the advantages of being long in industrial chain, high in added value, good in growth, wide in market prospect and the like, and accelerating the development of the lily industry and cultivating the lily industry into the pillar industry of local economy play an irreplaceable promoting role in expanding regional economic strength and achieving great-leap-forward development of local economy.

The invention relates to a novel V method casting process, belonging to the technical field of V method casting. The invention aims at providing the novel V method casting process which removes an air vent, adopts negative pressure to control the casting process, and has low defective rate of products and high product yield of process. The novel V method casting process comprises the following steps: respectively installing an upper mold plate and a lower mold plate on two stations, wherein vent holes in the mold plates and mold samples are smooth; baking a film of a mold cavity; when the film is heated to a mirror plane, causing a landing gear to drop down, and opening a vacuum valve for negative-pressure film coating; spraying paint on the film and blow-drying the film; placing the film on a sand box and the mold plates for vibrated sand filling and slicking the top surface of the box; putting a back film, inserting a negative-pressure tube vacuum-pumping system into the sand box, and meanwhile cutting off vacuum on the mold plates; turning over the box, setting a core; manufacturing an upper box by the same method; carrying mold assembly and pouring, wherein the negative-pressure tube vacuum-pumping systems are inserted into the upper box and a lower box in the pouring process. The novel V method casting process can be widely applied to casting.

The invention discloses a standardized planting method for interplanting reineckia carnea and crops. The method comprises the following steps of: (1) planting the reineckia carnea; (2) interplanting the crops; (3) field management; and (4) harvesting. In the method, a planting mode of interplanting three crops such as broad bean, the reineckia carnea and corn is adopted; and the three crops are combined together very well by utilizing different growing seasons and different living space environments of the three plants; the method is an innovation in agricultural production; a relatively good planting mode is provided for the agricultural production; the immobilization of a conventional mode is broken; soil is improved; the utilization rate of the soil is improved; resources such as light, water, fertilizer, land and the like are utilized positively and effectively; the production efficiency of the crops is effectively improved; the production cost of the crops is reduced; and the method has very favorable popularization advantages.

The invention relates to a preparation method and application of a lentinus edodes mycelium bio-based composite material, and belongs to the technical field of bio-based materials. The preparation method comprises the following steps: preparing a biological culture medium; inoculating lentinus edodes strains into a biological culture medium, and carrying out primary mycelium culture; crushing a product obtained by the primary mycelium culture until no white mycelium appears, adding water and wheat flour, uniformly mixing, putting the mixture into a mold, and carrying out secondary mycelium culture to obtain a semi-finished product; baking, shaping and sterilizing the semi-finished product, and then taking out and airing the semi-finished product to obtain the lentinus edodes mycelium bio-based composite material. The preparation method of the lentinus edodes mycelium bio-based composite material is good in forming effect and excellent in mechanical property.

The invention discloses a method based on micron-scale technique for fabricating a nano-scale CMOS integrated circuit which has a polycrystal SiGe grid. The process includes the following steps: fabricating an N/P well and growing a Poly- SiGe/SiN/Poly-Si multi-layer structure on the N/P well; etching the top layer of Poly-Si into a window and then depositing a layer of SiO2; etching away the SiO2 layer on the surface of the substrate, except the SiO2 at the side wall of Poly-Si; based on the etching ratio of Poly-Si to SiN(11:1), etching the Poly-Si on the surface of SiN; based on the ratio of SiN to SiO2(2:1), etching the SiN, except the SiN in the protective area on the side wall of SiO2; based on the etching ratio of Poly-SiGe to SiO2(50:1), etching the Poly-SiGe, except the Poly-SiGe in the protective area on the side wall of SiO2 so as to form an n/p MOSFET grid; injecting ions, self-aligning, and forming the source area and the drain area of the n/p MOSFET grid so as to form an n/p MOSFET device; and photoetching interconnection lines of the device so as to form a CMOS integrated circuit with a conducting channel at 45-90nm. The method can fabricate a CMOS integrated circuit which has a polycrystal SiGe grid on a micron-scale Si integrated circuit processing platform without adding any funds and equipment investment.

The invention discloses a rare earth permanent magnet direct drive drilling machine. The drilling machine comprises a back-up wrench, wherein an NC protection connector is movably arranged on the inner side of the back-up wrench. The drilling machine adopts a top drive mode and has the advantages of being long in stroke, high in efficiency, high in reliability and the like; the drilling machine adopts a permanent magnet motor direct driving scheme, has no reduction gearbox, controls the rotating speed of the drilling machine through a frequency converter, and has the advantages of low noise, compact structure, simple control algorithm and the like; the drilling machine can carry out three-joint drilling, the efficiency is much higher than that of single-joint drilling, the lifting capacityis high, pump starting for hole bottom cleaning is carried out at any time, and drilling accidents are very convenient to handle; a winch of the drilling machine can achieve automatic bit feeding, hovering and friction-free braking, and the working conditions that a brake strap, a hub and a disc brake working clamp of a traditional drilling machine control the drilling down and bit feeding speedthrough friction force are replaced; and an intelligent driller console of the drilling machine has the functions of drilling machine operation and drilling parameter real-time display, electro-hydraulic system operation monitoring and display, fault display and alarm, and the automation, intelligence and integration levels in the drilling process are improved.

The invention discloses a method for peacefully using atomic energy shock wave bombs to disperse heavy rain, belonging to the technical field of disaster prevention and mitigation for preventing heavy rain. It is characterized by the use of a non-nuclear detonation method to trigger the fusion of hydrogen atoms, and the airburst effect to disperse a wide range of deep precipitation clouds. When the cumulonimbus cloud forms a heavy rainstorm or a heavy rainstorm before or during the heavy rainstorm, the airborne airdrop GNSS guidance method is used to drop the shock wave bomb into the set three-dimensional coordinate position of the large cumulonimbus cloud, and the shock wave generated by the air explosion Disperse the large cumulonimbus clouds into scattered small cumulonimbus clouds, thereby turning the upcoming heavy rainstorm and torrential rainstorm into moderate rain. The effects and benefits of the present invention are fast, accurate, efficient, safe and no residual nuclear radiation, so as to avoid continuous heavy rain or concentrated strong showers, hail, blizzard and other meteorological disasters by peacefully utilizing atomic energy, and to protect human life, property and the environment and ecological balance.

The invention discloses an autumn sowing cultivation method for garlic with black mulch film full coverage and micro ridges. The method comprises following steps: 1) land selecting and land preparing; 2) soil processing; 3) ridging; 4) seed selecting and seed processing; 5) sowing; 6) preventing and controlling diseases and pests; 7) recovering residue films and processing soil. The soil processing method in step 2) comprises following steps: adding 50% phoxim missible oil to wheat bran and well mixing the mixture and then broadcasting the mixture to the ground; for ridging and film covering in the step 3), the ridging comprises following steps: using a simple artificial ridging film harrow to trench and ridge, after ridging, working bands and each is 120 cm wide is formed; each band comprises five micro ridges, four furrows, the distance between ridges is 30 cm and the ridge is 10 cm high. The method of the invention integrates integrative technical measures such as mulch film coverage, soil deep ploughing, crop rotation, organic fertilizer adding, garlic seed processing, diseases and pest green control and residue film recovery and utilization, which effectively reduces destruction of generation on soil and pollution of high residual pesticide on ecological environment and therefore the ecological benefit is obvious.

The invention discloses a method based on SiO2 masking technique for fabricating a nano-scale CMOS integrated circuit which has a polycrystal SiGe grid. The process includes the following steps: fabricating an N/P well and growing a Poly- SiGe/SiO2/Poly-Si multi-layer structure on the N/P well; etching the top layer of Poly-Si into a window and then depositing a layer of SiO2; etching the SiO2 layer on the surface, except the SiO2 at the side face of the window; based on the etching ratio of Poly-Si to SiO2 (50:1), etching the Poly-Si at the upper layer; based on the etching ratio of Poly-SiGe to SiO2 (50:1), etching the SiO2 and the Poly-SiGe, except the SiO2 and Poly-SiGe in the protective area at the side wall of the SiO2, preserving the SiO2 and Poly-SiGe below the side wall, forming a n/p MOSFET grid and depositing a layer of SiO2; injecting ions, self-aligning, and forming the source area and the drain area of the n/p MOSFET grid so as to form an n/p MOSFET device; and photoetching interconnection lines of the device so as to form a CMOS integrated circuit with a conducting channel at 65-90nm. The method can fabricate a CMOS integrated circuit which is improved in performance by 3-5 generations on a micron-scale Si integrated circuit processing platform without adding any funds and equipment investment.

The invention discloses a method based on SiN masking technique for fabricating a nano-scale CMOS integrated circuit. The process includes the following steps: fabricating an N/P well and growing a Poly-Si/SiN/Poly-Si multi-layer structure on the N/P well; etching the top layer of Poly-Si into a window and then depositing a layer of SiN; etching away the SiN on the surface of the substrate, except the SiN at the side wall of the Poly- Si; based on the etching ratio of Poly-Si to SiN(11:1), etching the Poly-Si on the surface of SiN; etching the SiN on surface of the substrate, except the SiN on the side wall of the SiN so as to expose the substrate of Poly-Si; based on the etching ratio of Poly-Si to SiN, etching the Poly-Si, except the Poly-Si in the protective area on the side wall of SiN so as to form an n/p MOSFET grid, and depositing a layer of SiO2 at the well area; injecting ions, self-aligning, and forming the source area and the drain area of the n/p MOSFET grid so as to form an n/p MOSFET device; and photoetching interconnection lines of the device so as to form a CMOS integrated circuit with a conducting channel at 45-90nm. The method can fabricate a CMOS integrated circuit which is improved in performance by 3-5 generations on a micron-scale Si integrated circuit processing platform without adding any funds and equipment investment.

The invention discloses a stress silicon (Si) vertical-channel P-channel metal-oxide semiconductor (PMOS) integration device prepared by a micrometer level process and a preparation method. The method is characterized in that a PMOS device is formed through an epitaxial material preparation step, an isolator preparation step, a drain connecting region preparation step and a PMOS forming step; and finally a PMOS integration circuit with the length of a conducting channel of 22 to 45nm is formed through a step for forming the PMOS integration circuit. By utilizing the characteristic that the hole mobility of the stress Si is higher than that of relaxation Si, on the platform of a micrometer-level Si integration circuit processing technique, the stress Si vertical-channel PMOS integration device and the circuit with excellent performance are manufactured under low temperature.

The invention provides a large cloud platform, and belongs to the technical field of informatization. The platform comprises six parts: 1) a large-scale virtualization platform, 2) a large-scale container cloud platform, 3) a multi-center unified deployment operation and maintenance platform, 4) a cloud service factory platform, 5) a service network flow detection platform, and 6) a full-transparent omnidirectional service chain platform. By providing rich basic services such as calculation, storage, network, security and data, tool services such as software development and testing, and high and new technology services such as artificial intelligence and Internet of Things, comprehensive technical support capability is provided for cloud and application innovation in the industry.

A standard method for planting radix pseudostellaria includes such steps as reproducing seedlings, preparing soil, planting, management and harvesting the pseudostellaria root as Chinese-medicinal material.