Ohm contact of gallium nitride base device and preparation method thereof

Abstract

The invention discloses an ohmic contact of a GaN-based apparatus and a manufacturing method thereof, belonging to the technical field of semiconductors. The ohmic contact of the GaN-based apparatus is composed of a titanium metal layer, an aluminum metal layer, a barrier metal layer and a gold metal layer; the titanium metal layer is contacted with the ohmic contact of the GaN-based apparatus, the aluminum metal layer is covered on the titanium metal layer, the barrier metal layer and the gold metal layer are covered on the titanium metal layer and the aluminum metal layer in sequence, wherein, the titanium metal layer and the aluminum metal layer are overlapped in two to ten periods. Compared with the prior ohmic contact structure, the invention balances low ohmic contact ratio based on the ohmic contact of a multilayer Ti / Al structure, has good surface appearance and high reliability, can improve the combination property of the ohmic contact, and has an important meaning for realizing the GaN-based apparatus with high performance and high reliability.

Description

technical field [0001] The invention relates to a gallium nitride-based device in the field of semiconductor technology, in particular to an ohmic contact of a gallium nitride-based device and a preparation method thereof. Background technique [0002] Devices based on AlGaN / GaN materials are collectively referred to as gallium nitride-based devices, such as AlGaN / GaN heterojunction field effect transistors (heterostructure field effect transistors, HFET), heterojunction bipolar transistors (heterostructure bipolar transistor, HBT), etc. . Gallium nitride-based devices have the advantages of high operating temperature, strong breakdown field, high cut-off frequency, and high power density. [0003] Unlike traditional Si devices and GaN systems, gallium nitride-based devices cannot form ohmic contacts by heavily doping semiconductor materials. The specific process is: first, magnetron sputtering or electron beam evaporation deposition on the surface of the semiconductor requ...

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Problems solved by technology

However, in the actual results, it was found that the role of Al in the ohmic contact of the above-mentioned Ti / Al / Ni / Au system is not only as mentioned above, but its role needs further research; and Ni, as a barrier metal, cannot completely To block the interdiffusion between metals, the specific role of these metals needs to be further studied

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