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Method for preparing P type electrode of gallium nitride based semiconductor laser device

A gallium nitride-based, semiconductor technology, applied in semiconductor lasers, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as window and electrode alignment errors, photoresist development is not clean, and P-type GaN surface is polluted , achieving high success rate, avoiding electrode window and electrode dislocation problems, and simple process

Inactive Publication Date: 2010-06-09
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no matter whether the passivation layer is evaporated before or after the electrode, there are still problems in the alignment error between the window and the electrode, the photoresist is not developed cleanly, and the surface of the P-type GaN is polluted.

Method used

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  • Method for preparing P type electrode of gallium nitride based semiconductor laser device
  • Method for preparing P type electrode of gallium nitride based semiconductor laser device
  • Method for preparing P type electrode of gallium nitride based semiconductor laser device

Examples

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Effect test

example 1

[0043] Such as figure 1 As shown, after Mesa etching and acid solution pretreatment of GaN strip semiconductor laser, the image 3 In the process flow shown, by PECVD (SiH 4 =3sccm, N 2 O=100sccm, He=100sccm, 66Pa, 350°C, 120w, 16min) to grow SiO 2 Passivation layer, and then throw a photoresist with a thickness of about 1.5 μm, expose, develop, and harden the film with a hot plate at 120°C for about 2 minutes. Then etched SiO in BOE at 25°C 2 For about 12 minutes, take it out and dry it on a hot plate at 120°C for about 2 minutes, then use E-beam for P-type electrode evaporation, and then lift off in acetone solution (Lift-Off). Finally wash with isopropanol and deionized water. See the effect Figure 4 .

example 2

[0045] Such as figure 2 As shown, the Mesa and Ridge etching of the GaN ridge semiconductor laser and the acid solution pretreatment are completed. Due to the shape of the protrusions, it is advisable to choose Si grown under optimized conditions. 3 N 4 . exist image 3 In the process flow shown, by PECVD (SiH 4 = 4 sccm, N 2 =150sccm, 70Pa, 300°C, 300w, 14min) to grow Si 3 N 4 Passivation layer, and then throw a photoresist with a thickness of about 1.5 μm, expose, develop, and harden the film with a hot plate at 120°C for about 2 minutes. Dry RIE (SF 6 =15sccm, 2Pa, 40W) etch away most of the Si in the window area 3 N 4 , and then overetched the remaining Si in BOE at 25°C 3 N 4 For about 10 minutes, take it out and dry it at 120°C for about 2 minutes, then use E-beam for P-type electrode evaporation, and then perform stripping in acetone solution (LIFTOFF). Finally wash with isopropanol and deionized water. See the effect Figure 5 .

[0046] Such as Figu...

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Abstract

The invention provides a method for preparing a P-type electrode of a GaN-based semiconductor laser, which belongs to the technical field of the preparation of a semiconductor laser component. The method comprises the following steps: the GaN-based semiconductor laser is put into acidic solution for surface pretreatment after the etching of the whole GaN-based semiconductor laser structure is finished and before the vapor deposition of the P-type electrode and a N-type electrode; the PECVD condition is optimized to cause a passivating layer to grow so as to warp the whole laser; the surface ofthe passivating layer is rotatablely coated with photoresist, a P-type electrode window is photo-etched and sequentially hardened; the passivating layer that exposes at the window area is removed through adopting the wet etching or the dry etching plus the wet etching, the original photoresist is then preserved, and the P-type Ni / Au electrode is directly evaporated through an electronic beam after being dried; and the peeling is carried out, thereby the whole P-type electrode technology is finished. The invention eliminates the influence on the component performance due to adverse factors inthe process flow as much as possible and effectively improves the reliability of the technology and the performance of the component.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser device preparation, and in particular relates to a method for preparing a P-type electrode of a gallium nitride-based semiconductor laser. Background technique [0002] The current information industry is developing rapidly, and it is developing towards the miniaturization of devices, high-speed transmission, and high-density storage. However, the diffraction limit (the minimum size of the focused spot is about a quarter of the wavelength) determines the storage density limit, and the only way to further increase the storage density is to use direct bandgap semiconductor materials with shorter wavelengths. [0003] Gallium nitride (GaN)-based semiconductor materials have a larger band gap than traditional gallium arsenide (GaAs)-based semiconductor materials, and their light-emitting wavelengths are shorter. They are currently the most promising materials for micro-optoelectronic devic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/00H01L21/28H01L21/00
Inventor 李睿胡晓东徐科代涛陈伟华胡成余包魁王彦杰张国义
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV