Infrared rapid heat-treatment cavity for semiconductor chip with movable heat baffle

Abstract

The invention relates to a semiconductor plate infrared fast heat treatment cavity with a movable thermal baffle, belonging to the technical field of the technological device for manufacturing an ultra large scale integrated circuit and a semiconductor. The heat treatment cavity comprises a flat rectangular double-layer quartz cavity, and an infrared heating cavity and an infrared reflection plate which are fixed between an inner quartz cavity and an outer quartz cavity. The front end of the inner quartz cavity extends into the outer quartz cavity. The front ends of the inner quartz cavity and the outer quartz cavity are provided with a sealing cavity cover and a sealing valve thereof. The heat treatment cavity also comprises a mechanical hand which is provided with a quartz plate supportfixedly, and a drive mechanism. The movable thermal baffle is also arranged outside the double-layer quartz cavity. The thermal baffle can extend into a gap between the external wall of the inner quartz cavity and the internal wall of a flat rectangular infrared heating cavity from the back end of the double-layer quartz cavity along the direction of axis of the double-layer quartz cavity. The heat treatment cavity of the invention can ensure that a semiconductor plate is heated or cooled fast and realize actual spike annealing. The heat treatment cavity heats the semiconductor plate with uniform temperature within wide range; the heated semiconductor plate has high heating rate and cooling rate; and the semiconductor plate has any size and high production efficiency.

Description

technical field [0001] The invention belongs to the technical field of very large-scale integrated circuits and semiconductor manufacturing process equipment, and in particular relates to the structural design of a semiconductor chip infrared rapid heat treatment chamber. Background technique [0002] In order to meet the requirements of VLSI ultra-shallow junction, silicide formation, thin oxygen growth and rapid thermal nitridation, the inventors of the present application have invented a flat rectangular graphite cavity heated by radio frequency induction as a rapid infrared radiation heat source, so that the infrared The temperature uniformity of the heat treatment quartz chamber of the rapid heat treatment equipment meets the requirements of semiconductor chips below 8" (Φ200mm) (utility model patent: heat treatment quartz chamber of infrared rapid heat treatment equipment, patent number: 2L 93241758.2). Its structure is as follows figure 1 As shown: a rectangular quart...

AI Technical Summary

Problems solved by technology

However, annealing semiconductor wafers in the above-mentioned existing heating chamber cannot achieve extremely fast heating and cooling.

Because when the semiconductor chip is sent into the heating chamber, if the temperature rise rate is too fast, due to the thermal inertia of the heater, the preset heating temperature will be greatly exceeded, and the temperature control system cannot accurately control its temperature; When the cavity is heated, the semiconductor chip will continue to be radiated by the heat of the graphite heating cavity and cannot be cooled quickly

Therefore, the infrared rapid heat treatment chamber with the above structure can no longer meet the requirements

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