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Inductance coupling coil and plasma device

A technology for inductively coupling coils and plasmas, applied in the direction of plasmas, coils, inductors, etc., can solve problems such as uneven distribution of plasma density, and achieve the effects of improving distribution uniformity, improving uniformity, and improving quality

Active Publication Date: 2012-03-07
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problem of uneven distribution of plasma density in the process of semiconductor processing, the invention provides an inductively coupled coil and a plasma device using the inductively coupled coil

Method used

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  • Inductance coupling coil and plasma device
  • Inductance coupling coil and plasma device
  • Inductance coupling coil and plasma device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Such as image 3 As shown in the structural diagram of the inductive coupling coil, the inductive coupling coil includes two identical branches, each branch is composed of an inner coil 7 and an outer coil 8, and the end of the inner coil 7 and the beginning of the outer coil 8 are connected in series through a connecting section 9; The inner and outer coils of the two branches are respectively symmetrically nested and coplanar. The inner coil 7 and the outer coil 8 of each branch are helical and have opposite winding directions, that is, when the inner coil 7 winds clockwise, the outer coil 8 winds counterclockwise, or when the inner coil 7 winds counterclockwise. When clockwise, the winding direction of the outer coil 8 is clockwise. The coil as a whole is a planar coil.

Embodiment 2

[0029] Such as Figure 4 As shown in the schematic diagram of the structure of the inductive coupling coil, the inductive coupling coil includes two identical branches, each branch is composed of an inner coil 7 and an outer coil 8 , and the end of the inner coil 7 and the beginning of the outer coil 8 are connected in series through a connecting section 9 . The inner and outer coils of the two branches are respectively symmetrically nested and coplanar. The inner coil 7 of each branch is arc-shaped, the outer coil 8 is helical, and the winding directions of the inner coil 7 and the outer coil 8 are opposite, that is, when the inner coil 7 is clockwise, the outer coil 8 is counterclockwise. Or when the winding direction of the inner coil 7 is counterclockwise, the winding direction of the outer coil 8 is clockwise. The coil as a whole is a planar coil.

Embodiment 3

[0031] Such as Figure 5 As shown in the schematic diagram of the structure of the inductive coupling coil, the inductive coupling coil includes two identical branches, each branch is composed of an inner coil 7 and an outer coil 8 , and the end of the inner coil 7 and the beginning of the outer coil 8 are connected in series through a connecting section 9 . The inner and outer coils of the two branches are respectively symmetrically nested and coplanar. The inner coil 7 in the coils of each branch is arc-shaped, and the outer coil 8 is formed by serially connecting multiple sections of arc-shaped coils with increasing radii of curvature through the connecting section 15 of the outer coil. The winding directions of the inner coil 7 and the outer coil 8 are opposite, that is, when the inner coil 7 winds clockwise, the outer coil 8 winds counterclockwise, or when the inner coil 7 winds counterclockwise, the outer coil 8 winding direction is clockwise. The coil as a whole is a ...

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Abstract

The invention relates to an inductively coupled coil used in the semiconductor machining process, and a plasma device which uses the inductively coupled coil. The key design points lie in that the inductively coupled coil at least comprises two identical branches, and each branch comprises an inner coil (7) and an outer coil (8); the coiling directions of the inner and outer coils are opposite; the tail end of the inner coil (7) is connected with the initial end of the outer coil (8) in series through a connecting segment (9); and the inner and outer coils of each branch are symmetrically nested respectively and are coplanar. When in work, the RF current flowing through the inner coil and the RF current flowing through the outer coil are opposite in direction, so that uniformly distributed electromagnetic fields are generated in a reaction chamber so as to obtain uniformly distributed plasmas; according to the wafer size, a large area of plasmas can be easily obtained through the increase of coil length and number to improve the uniformity of plasmas in the large-area process, so as to achieve less chemical reaction rate differences on the wafer surface and improve the quality of wafer products.

Description

technical field [0001] The invention relates to an inductively coupled coil and a plasma device, in particular to the technical field of semiconductor processing. Background technique [0002] At present, with the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires enterprises that produce integrated circuits to continuously improve the processing capacity of semiconductor wafers. Plasma devices are widely used in fabrication processes for manufacturing integrated circuits (ICs) or MEMS devices. Therefore, the development of plasma devices suitable for etching, deposition or other processes is crucial to the development of semiconductor manufacturing processes and equipment. In the development of plasma devices for semiconductor manufacturing processes, the most important factors are the ability to work on large substrates in order to increase productivity, and the ability to perfo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F5/00H01F38/14H05H1/46H05H1/50H01L21/306
Inventor 韦刚
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD