Collecting electrode IGBT having hole injection structure

Abstract

A collector-short IGBT with a hole injection structure belongs to the technical field of semiconductor power devices. In the invention, the hole injection structure and a collector-short structure are introduced into a conventional planar non-punch through IGBT. The collector-short structure comprises short-circuit N regions (3) and P-type collector regions (2) arranged alternately; and the hole injection structure (14) consists of a third P body region (5), a third P-type base region (6), a third N source region (7) and a floating conductor (11), wherein the floating conductor (11) is used for short-connecting the third P-type base region (6) and the third N source region (7). By adopting the hole injection structure and the collector-short structure in the conventional planar non-punch through IGBT, the collector-short IGBT has lower conduction voltage drop, larger saturation current density and higher turn-off speed. According to the invention, the non-punch through IGBT can have better carrier concentration distribution in the base region, thereby achieving better consistence between the forward conduction voltage drop and turn-off loss.

Description

technical field [0001] The invention relates to a collector short-circuit IGBT (insulated gate bipolar transistor) with a hole injection structure, which belongs to the technical field of semiconductor power devices. Background technique [0002] Insulated gate bipolar transistor is the fastest growing hybrid power electronic device. It has the advantages of high input impedance, low control power, simple drive circuit and high switching speed of MOSFET, and has the advantages of high current density, low saturation voltage and strong current handling ability of bipolar power transistor. Widely used in induction cooker, UPS uninterruptible power supply, automotive electronic igniter, three-phase motor inverter, welding machine switching power supply and other products as power switch tube or power output tube. [0003] The insulated gate bipolar transistor, which was successfully researched and put into production in the early 1980s, is a non-transparent collector region th...

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Problems solved by technology

On the other hand, while non-punch-through insulated gate bipolar transistors use transparent collector technology to increase switching speed, since there is no N-type buffer layer, the electric field will end at the N-type base region, thus forming a triangular electric field distribution ,like figure 2 As shown, in order to ensure the withstand voltage, a relatively wide N-type base region must be used, resulting in an increase in the on-resistance, which also increases the static loss

Especially when subjected to high voltage, the conductance modulation effect will be significantly weakened, especially in the N near the emitter - Base area and JFET area, conduction loss increase will be more significant

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