Method for preparing hypovanadic oxide doped powder material

A technology of vanadium dioxide and powder materials, which is applied in the direction of vanadium oxide, etc., can solve the problems of high preparation cost, many impurity phases, and high energy consumption, and achieve the effects of low equipment requirements, high product performance, and simple synthesis

Inactive Publication Date: 2009-07-15
DALIAN UNIV OF TECH
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AI Technical Summary

Problems solved by technology

From the practical results, although doped vanadium dioxide powder can be prepared, the prepared VO 2 There are many miscellaneous phases, it is difficult to obtain pure M-phase VO 2 (A phase, B phase, M phase and R phase VO 2 , where M-phase VO 2 and R phase VO 2 Reversible thermal phase transition occurs); doping atoms

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0020] Weigh 5g V 2 o 5 , 0.20g H 2 WO 4 Mix with 0.5g ethanol, grind for 5-20 minutes, put the mixture in a muffle furnace and raise the temperature to 800-850°C, keep it warm for 10-20 minutes to obtain molten V 2 o 5 . Pour it into 100ml of water quickly at room temperature, and stir quickly to form a sol. The sol was allowed to stand for 30 min to obtain a gel. The moisture in the gel was evaporated to dryness in an oven at 80°C. Grind the obtained xerogel into powder, place it in a tube furnace, control the flow rates of ammonia and nitrogen in the reducing atmosphere to 5ml / min and 45ml / min, respectively, and reduce at 500°C for 1h. The obtained product was kept at 700°C for 7 hours in high-purity nitrogen, and then naturally cooled to room temperature under a protective atmosphere to obtain a blue-black sample. Gained W-doped vanadium dioxide powder (V 1.975 W 0.025 o 2 ) has a particle size of 100nm to 2μm, and a phase transition temperature of 47°C.

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Abstract

The invention discloses a method for preparing hypovanadic oxide powder-doped material, which belongs to the production and preparation field of inorganic functional materials and relates to the preparation of hypovanaic oxide powder doped with W, Mo or W/Mo. The method comprises the following steps: mixing and evenly grinding a vanadium source, a doped raw material and an auxiliary agent, pouring the mixture after being molten at a high temperature and keeping the temperature for a certain period of time into cold water to be rapidly water-quenched, drying the formed gel to form dry gel, thermal-reducing the grinded dry gel in the reduction atmosphere, performing annealing treatment in a protective atmosphere, and realizing the crystalling phase conversion at a constant temperature so as to obtain M-phase VO2 with phase transition property. The phase transition temperature of the VO2 powder after doping can be effectively controlled by adjusting the W and Mo atom doping amount. The invention has remarkable advantage in the aspects of preparation cost, product performance, technique flow, friendly environment, economic profit, and the like, has easily available raw materials, simple and convenient synthesis, low requirement on the equipment and high product performance, is suitable for industrial production and has wide application of product.

Description

technical field [0001] The invention belongs to the field of production and preparation of inorganic functional materials, and relates to a low-cost preparation method of doped vanadium dioxide powder material with phase transition characteristics. Background technique [0002] Vanadium dioxide (VO 2 ) is a kind of metal oxide with phase transition characteristics. It will undergo a reversible phase transition from low-temperature monoclinic phase (M phase) to high-temperature tetragonal rutile phase (R phase) at about 68 ° C. Accompanied by this structural change, its Physical properties such as electrical conductivity, magnetic susceptibility, light transmittance, resistivity and reflectivity will change suddenly, so that VO 2 It is widely used in intelligent temperature control films, thermistor materials, photoelectric switch materials, infrared detection materials, laser protective layers and other fields. In order to widen the VO 2 Fields of application and improvin...

Claims

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Application Information

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IPC IPC(8): C01G31/02
Inventor 叶俊伟宁桂玲刘风娟周莉林源
Owner DALIAN UNIV OF TECH
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