Method for preparing Bi2S3 quantum dot sensitized TiO2 membrane electrodes

Abstract

A method for preparing Bi2S3 quantum dot sensitized TiO2 membrane electrodes relates to a method for preparing quantum dot sensitized TiO2 membrane electrodes The invention solves the problem that the H2S gas which is adopted during the process for preparing the Bi2S3 quantum dot sensitized TiO2 membrane electrodes is explosive and harmful to human bodies in the prior art. The method comprises the following steps: preparing a porous TiO2 membrane electrode; soaking the porous membrane electrode into the ethanol solution of ethyl thioglycollic acid; and alternately soaking the porous membrane electrode in Bi(NO3)3 solution and Na2S solution to obtain the TiO2 membrane electrodes. The TiO2 membrane electrodes prepared by the method of the invention has the advantages that the Bi2S3 quantum dots compounded on the surface thereof are numerous and evenly distributed, and the photoelectric conversion efficiency is as high as 1.10% to 1.22%; the preparation process of the method dispenses with the H2S gas, the method is not harmful to human bodies or not easy to explode, thereby ensuring the environment friendliness; furthermore, the method of the invention is easy to operate.

Description

Preparation Method of Bi2S3 Quantum Dot Sensitized TiO2 Thin Film Electrode technical field The invention relates to a preparation method of a quantum dot sensitized TiO2 thin film electrode. Background technique The TiO2 thin film electrode has a wide band gap (Eg=3.2eV), and can only show photochemical activity in the ultraviolet region (λ≤380nm), so the utilization of solar energy is less than 10%. In order to improve the photoelectric efficiency of TiO2 thin film electrodes, it is often modified by noble metal surface deposition, semiconductor coupling and metal ion doping and other modification methods. Among them, semiconductor coupling is one of the effective means to improve the photoelectric conversion efficiency of TiO2 thin film electrodes. When the semiconductor grain size is about 10nm, it is called quantum dot. The semiconductor quantum dot structure has a strong three-dimensional quantum confinement effect on the carriers (such as electrons, holes, and exc...

AI Technical Summary

Problems solved by technology

The present invention provides a preparation method of Bi2S3 quantum dot sensitized TiO2 thin film electrode in order to solve the problem that H2S gas is poisonous to human body and easy to explode in the process of preparing Bi2S3 quantum dot sensitized TiO2 thin film electrode in the prior art