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One-dimensional nano single-crystal tubular silicon carbide as well as preparation method and application thereof

A nano-single crystal, silicon carbide technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of difficult to remove templates and catalysts, preparation difficulties, hindering applications, etc., to achieve huge application potential, Simple operation and low cost effect

Inactive Publication Date: 2009-09-09
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for the tubular SiC nanostructures, there are only a few reports due to the difficulty of preparation.
For these reported tubular SiC nanostructures, either have very low yields, are polycrystalline, or are difficult to remove the existing templates and catalysts, these drawbacks hinder their further application in future electronic devices

Method used

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  • One-dimensional nano single-crystal tubular silicon carbide as well as preparation method and application thereof
  • One-dimensional nano single-crystal tubular silicon carbide as well as preparation method and application thereof
  • One-dimensional nano single-crystal tubular silicon carbide as well as preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as figure 1 As shown, on the ceramic sheet (i.e. high temperature resistant material) 8, respectively put C as carbon source 60 Powder 10 (99.98% pure) and an area of ​​5 x 5mm 2 The (100)-oriented monocrystalline silicon wafer 9 is used as a substrate and a silicon source, wherein the monocrystalline silicon wafer is located at C 60 5cm behind the powder. This ceramic chip 8 is put into internal diameter again and be in the ceramic tube (being high temperature resistant inner tube) 7 of 2cm, then ceramic tube 7 is put into internal diameter and be in the ceramic heating tube 3 of 5cm, guarantee that the thermocouple 4 of high temperature furnace 1 ( thermocouple position) and C 60 The powders 10 are located on the same straight line. Then the high-temperature furnace 1 was evacuated for 30 minutes, and then 150 sccm of argon gas was introduced, and the pressure in the furnace reached 50 kPa before heating, and the furnace temperature (temperature at the thermo...

Embodiment 2

[0044] Put commercially available carbon nanopowder (purity 90%) as carbon source on a ceramic sheet (high temperature resistant material) respectively, and area is 10 * 10mm 2 The (110) oriented single crystal silicon wafer was used as the substrate and silicon source, and the single crystal silicon wafer was located 12 cm behind the carbon nanopowder. Then put the ceramic sheet into a ceramic tube (high temperature resistant inner tube) with an inner diameter of 3 cm, and then put the ceramic tube into a ceramic heating tube with an inner diameter of 5 cm to ensure that the thermocouple (thermocouple position) of the high temperature furnace is in contact with the raw material carbon nanometer The powder is on the same straight line. Then the whole system (i.e. high-temperature furnace) was vacuumized for 60 minutes, and then 100 sccm of argon gas was introduced to make the pressure in the furnace reach 5kPa, and then start heating, so that the furnace temperature (temperatu...

Embodiment 3

[0046] Put commercially available carbon micron powder (purity 95%) as carbon source respectively on a ceramic sheet (high temperature resistant material), and the area is 2 * 2mm 2 The (111) oriented single crystal silicon wafer was used as the substrate and the silicon source, and the single crystal silicon wafer was located 3 cm behind the carbon micron powder. Then put the ceramic sheet into a ceramic tube (high temperature resistant inner tube) with an inner diameter of 3 cm, and then put the ceramic tube into a ceramic heating tube with an inner diameter of 5 cm to ensure that the thermocouple (thermocouple position) of the high-temperature furnace is aligned with the raw material carbon micron The powder is on the same straight line. Then the whole system (i.e. high-temperature furnace) was vacuumized for 20 minutes, and then 50 sccm of helium was introduced to make the pressure in the furnace reach 10kPa, and then start heating, so that the temperature of the furnace (...

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Abstract

The invention discloses a one-dimensional nano single crystal-tubular silicon carbide as well as a preparation method and an application thereof. The one-dimensional nano single crystal-tubular silicon carbide capable of covering a substrate is prepared by a simple gas-solid reaction for the first time under the condition that no accelerant and template are used. The one-dimensional single crystal-tubular silicon carbide contains no accelerant and template, has a length of 1 micron to 10 microns, an outside dimension of 40 nm to 100 nm, a hollow inside dimension of 5 nm to 30 nm, a slight taper angle of 1 degree to 3 degrees at the head and an open form and a closed form, particularly has excellent photoluminescence and field electron emission characteristics and can be applied to luminescent devices and flat panel displays. The invention is simple and easy to implement, consumes little time, has high yield and low cost and is suitable for industrial integrated mass production.

Description

technical field [0001] The invention relates to the technical field of preparation of tubular nanomaterials, in particular to a one-dimensional nano single-crystal tubular silicon carbide which is far away from catalysts and templates and has excellent luminescence and field electron emission characteristics, and its preparation method and application. Background technique [0002] Since Iijima first discovered carbon nanotubes in 1991, the preparation of various one-dimensional nanomaterials has become a focus of attention. Compared with traditional bulk materials, one-dimensional nanomaterials, especially one-dimensional semiconductor materials (including nanowires, nanorods, nanotubes, and nanoribbons) have excellent size effects and electron transport properties, making them suitable for use in It has a wide range of applications in many fields such as electricity, magnetism, and optics, and has strong competitiveness. [0003] Silicon carbide is an important wide-bandg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/66C30B29/36C30B25/00H01L31/0264
Inventor 王成新崔浩孙勇杨功政
Owner SUN YAT SEN UNIV