Unlock instant, AI-driven research and patent intelligence for your innovation.

One-dimensional nano single-crystal tubular silicon carbide as well as preparation method

A nano-single crystal and silicon carbide technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve problems such as difficult removal of templates and catalysts, hindering applications, and difficult preparations, achieving huge application potential, The effect of low cost and simple operation

Inactive Publication Date: 2011-09-28
SUN YAT SEN UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the tubular SiC nanostructures, there are only a few reports due to the difficulty of preparation.
For these reported tubular SiC nanostructures, either have very low yields, are polycrystalline, or are difficult to remove the existing templates and catalysts, these drawbacks hinder their further application in future electronic devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • One-dimensional nano single-crystal tubular silicon carbide as well as preparation method
  • One-dimensional nano single-crystal tubular silicon carbide as well as preparation method
  • One-dimensional nano single-crystal tubular silicon carbide as well as preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] like figure 1 As shown, the C 60 Powder 10 (99.98% purity) and area 5×5mm 2 The (100) oriented single crystal silicon wafer 9 serves as the substrate and silicon source, wherein the single crystal silicon wafer is located at C 60 5cm behind the powder. Put this ceramic sheet 8 into the ceramic tube (i.e. high temperature resistant inner tube) 7 whose inner diameter is 2cm again, then put the ceramic tube 7 into the ceramic heating tube 3 whose inner diameter is 5cm, to ensure that the thermocouple 4 ( thermocouple position) and C 60 The powders 10 lie on the same line. Then the high-temperature furnace 1 was evacuated for 30 minutes, and then 150sccm of argon was introduced to make the furnace pressure reach 50kPa and then start heating, and the furnace temperature (the temperature at the thermocouple) was heated to 1300 °C and kept for 30 minutes, and then cooled to room temperature (25°C), take out the silicon wafer, and a gray-white substance is formed on the si...

Embodiment 2

[0044] Commercially available carbon nanopowder (90% purity) as a carbon source was placed on a ceramic sheet (high temperature resistant material), and the area was 10 × 10 mm. 2 The (110) oriented single crystal silicon wafer was used as the substrate and the silicon source, wherein the single crystal silicon wafer was located 12 cm behind the carbon nanopowder. Then put the ceramic sheet into a ceramic tube with an inner diameter of 3cm (high temperature resistant inner tube), and then put the ceramic tube into a ceramic heating tube with an inner diameter of 5cm to ensure that the thermocouple (thermocouple position) of the high temperature furnace is connected with the raw carbon nanometer. The powders are on the same line. Then the whole system (ie high temperature furnace) was evacuated for 60 minutes, and then 100sccm of argon was introduced to make the pressure in the furnace reach 5kPa, and then heating was started, and the furnace temperature (the temperature at the...

Embodiment 3

[0046] Commercially available carbon micro-powder (95% purity) as a carbon source was placed on a ceramic sheet (high temperature resistant material), and the area was 2 x 2 mm. 2 The (111) oriented single crystal silicon wafer is used as the substrate and the silicon source, wherein the single crystal silicon wafer is located 3 cm behind the carbon micropowder. Then put the ceramic sheet into a ceramic tube with an inner diameter of 3cm (high temperature resistant inner tube), and then put the ceramic tube into a ceramic heating tube with an inner diameter of 5cm to ensure that the thermocouple (thermocouple position) of the high temperature furnace and the raw material carbon micron The powders are on the same line. Then the whole system (ie high temperature furnace) was evacuated for 20 minutes, then 50sccm of helium was introduced to make the pressure in the furnace reach 10kPa, and then heating was started, and the furnace temperature (the temperature at the thermocouple)...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a one-dimensional nano single crystal-tubular silicon carbide as well as a preparation method and an application thereof. The one-dimensional nano single crystal-tubular silicon carbide capable of covering a substrate is prepared by a simple gas-solid reaction for the first time under the condition that no accelerant and template are used. The one-dimensional single crystal-tubular silicon carbide contains no accelerant and template, has a length of 1 micron to 10 microns, an outside dimension of 40 nm to 100 nm, a hollow inside dimension of 5 nm to 30 nm, a slight taper angle of 1 degree to 3 degrees at the head and an open form and a closed form, particularly has excellent photoluminescence and field electron emission characteristics and can be applied to luminescent devices and flat panel displays. The invention is simple and easy to implement, consumes little time, has high yield and low cost and is suitable for industrial integrated mass production.

Description

technical field [0001] The invention relates to the technical field of preparation of tubular nanomaterials, in particular to a one-dimensional nanometer single-crystal tubular silicon carbide which is far away from catalysts and templates and has excellent luminescence and field electron emission characteristics, and a preparation method and application thereof. Background technique [0002] Since the first discovery of carbon nanotubes by Iijima in 1991, the preparation of various one-dimensional nanomaterials has become a focus of attention. Compared with traditional bulk materials, one-dimensional nanomaterials, especially one-dimensional semiconductor materials (including nanowires, nanorods, nanotubes, nanoribbons), have excellent size effect and electron transport characteristics, making them in Electricity, magnetism, optics and many other fields have a wide range of applications and have strong competitiveness. [0003] Silicon carbide is an important wide-bandgap ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/66C30B29/36C30B25/00H01L31/0264
Inventor 王成新崔浩孙勇杨功政
Owner SUN YAT SEN UNIV