An NTC resistive material and its preparation method

A technology of resistive materials and manufacturing methods, applied in the direction of resistors with negative temperature coefficients, etc., to achieve the effect of less nickel content, which is conducive to mass production and improves stability

Inactive Publication Date: 2009-09-30
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above-mentioned technical problems existing in the existing NTC thermistor materials, the present inventio

Method used

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  • An NTC resistive material and its preparation method

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Experimental program
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Embodiment 1

[0022] Embodiment 1: by molecular formula Ba 1-x D. x Ti 1-y-z Ni y MZO 3 Dosing was performed where y=0.1, x=z=0. The starting raw material is selected from barium carbonate BaCO 3 , tetra-n-butyl titanate [CH 3 (CH 2 ) 3 O] 4 Ti, basic nickel carbonate CH 2 Ni 2 o 5 . Materials were prepared according to the following experimental process steps:

[0023] ① Press the initial raw material to BaTi 0.9 Ni 0.1 o 3 Molecular formula element ratio, weigh 19.199g of BaCO 3 , 29.760g of [CH 3 (CH 2 ) 3 O] 4 Ti 1.040g CH 2 Ni 2 o 5 ;

[0024] 2. Dissolve the raw materials taken in the previous step in 6mol / L dilute nitric acid respectively;

[0025] ③ Mix the three solutions prepared in the previous step, and use a magnetic stirring heater to stir and mix evenly, and heat and dry;

[0026] ④Calcinate the powder obtained in the previous step at a temperature of 1100°C and keep it warm for 2 hours;

[0027] ⑤ The powder synthesized in the previous step is gran...

Embodiment 2

[0032] Embodiment 2: by molecular formula Ba 1-x D. x Ti 1-y-z Ni y m z o 3 Dosing was performed with y=0.3, x=z=0. The starting raw material is selected from barium carbonate BaCO 3 , tetra-n-butyl titanate [CH 3 (CH 2 ) 3 O] 4 Ti, basic nickel carbonate CH 2 Ni 2 o 5 . Materials were prepared according to the following experimental process steps:

[0033] ① Press the initial raw material to BaTi 0.7 Ni 0.3 o 3 Molecular formula element ratio, weigh 21.117g BaCO 3 , 25.458g[CH 3 (CH 2 ) 3 O] 4 Ti, 3.425g CH 2 Ni 2 o 5 ;

[0034] ② The preparation process is the same as the steps ②~⑧ in Example 1.

[0035] The properties of the prepared materials are shown in Table 1 and Figure 1.

Embodiment 3

[0036] Embodiment 3: this example presses molecular formula Ba 1-x D. x Ti 1-y-z Ni y m z o 3 Dosing was performed where x=0, y=0.1, z=0.003. The starting raw material is selected from barium carbonate BaCO 3 , tetra-n-butyl titanate [CH 3 (CH 2 ) 3O] 4 Ti, basic nickel carbonate CH 2 Ni 2 o 5 and antimony trioxide Sb 2 o 3 . Materials were prepared according to the following experimental process steps:

[0037] ① Press the initial raw material to BaTi 0.897 Ni 0.1 Sb 0.003 o 3 Molecular formula element ratio, weigh 19.222gBaCO 3 , 29.696g[CH 3 (CH 2 ) 3 O] 4 Ti, 1.392g CH 2 Ni 2 o 5 and 0.043g Sb 2 o 3 ;

[0038] 2. Dissolve the raw materials taken in the previous step in 6mol / L dilute nitric acid respectively;

[0039] ③Mix the four solutions prepared in the previous step, and use a magnetic stirring heater to stir and mix evenly, and heat and dry;

[0040] ④The preparation process is the same as steps ④~⑧ in Example 1.

[0041] The propertie...

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Abstract

The present invention discloses an NTC resistive material and its preparation method. Composition of this material: Ba<1-x>DxTi<1-y-z>Ni<y>MzO3, wherein x=0-0.01; y=0.05-0.5; z=0-0.01, D is a trivalent semiconducting element and contains at least one of the following elements: Bi, La, Sm, Gd, Y, Ho, Nd, Dy and Sc and its content is 0-1% of the total material amount; M is a pentavalent micro-semiconducting element and contains at least one of the following elements: Sb, Nb, Ta and V and its content is 0-1% of the total material amount. The thermistor material of the present invention is characterized by good stability, consistency and repeatability, and controllable resistance value, material constant, resistance temperature coefficient and other electrical properties. The material is applicable to temperature measurement and control and line drop compensation of automobiles, refrigerators and etc.

Description

technical field [0001] The invention relates to a semiconductor ceramic material, in particular to an NTC resistance material and a manufacturing method. Background technique [0002] Thermal sensors are devices made using the characteristics of material resistivity that changes with temperature, including positive temperature coefficient (PTC) thermistors whose resistivity increases with temperature or those whose resistivity decreases with temperature Negative Temperature Coefficient (NTC) Thermistor Element. NTC thermistor components and devices have been widely used in temperature measurement, control, temperature compensation, protection of circuits and electronic components, and related instruments and applications for flow rate, flow, and radiation measurement. [0003] In normal temperature NTC thermistors, spinel structure NTC thermistor elements made of oxides of transition metals manganese, nickel, cobalt, iron, and copper are mainly used, and they have been wide...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/622H01C7/04
Inventor 李志成张鸿汪健
Owner CENT SOUTH UNIV
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