Supercharge Your Innovation With Domain-Expert AI Agents!

High-purity nickel target for magnetron sputtering

A magnetron sputtering, nickel target technology, used in sputtering plating, metal material coating process, ion implantation plating and other directions

Inactive Publication Date: 2011-05-04
沈阳金纳新材料股份有限公司
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Existing problems 1. The thickness of the pure nickel target should not be too thick, which will affect the utilization of the target
[0009]The second problem is that the magnetic field distribution is uneven after the sputtering etching ring is formed on the pure nickel target, and the etching is deep and deteriorated in a V-shape, which affects the coating quality and pure nickel. Nickel target utilization
[0011]The third problem is that there is a difference in the magnetic field strength between the straight track and the corner of the pure nickel rectangular target, and the etching depth difference between the straight track and the corner of the sputtering etching ring is large , the depth of the deepest etching determines the life of the target
If the curve magnets are reduced, on the one hand, the uneven distribution of the magnetic field will cause differences in the coating quality, and at the same time, sometimes about 50% of the erosion is caused in the curves, while the erosion of more than 85% in the straight roads
From the analysis of problem 2, it can be seen that the difference in the magnetic field of the existing planar pure nickel target material in the early stage will cause the difference in the etching depth of the sputtering sputtering ring later, and the difference in the magnetic field further strengthened by the difference in depth makes the difference continue to enlarge, and finally make a big difference
This will inevitably lead to low target utilization and short life
[0013] The fourth problem is that the target material is too thick and the cooling is not good. Due to the increase in the heat of the target material, the temperature of the material substrate to be plated is high. For materials such as glass It has no effect, but it has a greater impact on organic films or various types of foam. Organic films or foams are easily deformed when heated. When the temperature exceeds a certain threshold, the foam will also volatilize some gas, which will easily cause damage to the vacuum chamber. and target pollution, seriously affecting the quality of coating products

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-purity nickel target for magnetron sputtering
  • High-purity nickel target for magnetron sputtering
  • High-purity nickel target for magnetron sputtering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Increase the thickness of the target to 13mm. On the sputtering surface, use a milling machine to mill out a trapezoidal groove with a depth of 7mm at the top and a narrow bottom at the straight line, and mill a groove with a depth of 4mm at the curve. The curve is trapezoidal. The height of the road section transitions smoothly. The target is plated on the surface of the polyester film, and the utilization rate of the target (etching mass / total mass of the target x 100%) is 60% higher than that of the pure nickel target of equal thickness used in the past; the pure nickel target with grooves is coated The lateral resistance is 8.3±0.3Ω when the confidence level is 95%, and the lateral resistance of the pure nickel target coating film without grooves (nickel target 10mm thick) is 9.3±1.3Ω when the confidence level is the same; % is 15% at the beginning, 50% in the middle and 85% at the end of coating, and the test resistances are 8.3±0.3Ω, 8.4±0.3Ω and 8.5±0.4Ω respecti...

Embodiment 2

[0044] Increase the thickness of the target to 12mm. On the back of the sputtering surface, use a milling machine to mill a U-shaped groove with a depth of 5mm on the straight line, and mill a U-shaped groove with a depth of 3mm at the curve. The curve is arc-shaped, and the straight line and The height of the curve transitions smoothly, and the double-sided continuous plating of foam is adopted in the way of facing the target. The utilization rate of the target is increased by more than 50% compared with the pure nickel target of equal thickness used in the past. At the same time, due to the better cooling effect on the surface of the nickel target, the nickel target is not polluted by the volatile gas of the foam, while the pure nickel target of equal thickness used in the past has blackened deposits polluted by the volatile foam on the surface.

Embodiment 3

[0046] Prepare a pure nickel sputtering ring with a thickness of 8mm, which is rectangular in shape, and uniformly drill 16 screw holes with a diameter of 8mm on the non-sputtering surface, and pass the pure nickel sputtering ring and the flat nickel plate with a thickness of 5mm through the bolt with a gasket Assembled together, the polyester film is continuously plated on both sides by the target method, and the target utilization rate is increased by 50% compared with the equal-thickness pure nickel target used in the past.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a high-purity nickel target for magnetron sputtering. A circular sputtering ring with a regular shape or irregular shape is arranged on the sputtering surface or the surface of the back side of a flat target, the typical shape of the sputtering ring can be a rectangular shape, a round rectangular shape, an octagonal rectangular shape, a double-hemicycle rectangular shape,a hexagonal rectangular shape or an oval shape; a groove is positioned above a magnet behind the target, the groove can be a rectangular groove, a U-shaped groove, a V-shaped groove, a groove with a rectangular upper part and a trapezoidal lower part, a dovetail groove with a wide upper part and a narrow lower part or a double-rectangular groove with a wide upper part and a narrow lower part; a groove outside the sputtering ring is of a step shape. The invention has the advantages that the high-purity nickel target overcomes the problems of magnetic shielding of the magnetron sputtering ferromagnetic target, uneven distribution of the magnetic field after erosion, uneven transversal erosion and low utilization ratio of the target, overcomes the thickness limitation of the magnetic pure-nickel target, greatly reduces the change of the pure-nickel target along with the magnetron sputtering process, improves the uniformity of the coated film, equalizes the etched depth of the sputtering ring and greatly improves the utilization ratio of the pure-nickel target.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering coating, and in particular provides a high-purity nickel target material for magnetron sputtering. Background technique [0002] The sputtering method is widely used in wear-resistant parts, solar films, magnetic heads, chips and magnetic recording media, glass surfaces, a method of forming thin films on polyester tapes, film foam and polyurethane foam, etc., with high coating density , good adhesion, rapid development in recent years, wide application. [0003] Most of the sputtering practiced today is magnetron sputtering. The principle of magnetron sputtering Electrons collide with argon atoms during the process of accelerating to the substrate under the action of an electric field, ionizing a large number of argon ions and electrons. Under the action of the electric field, the argon ions accelerate the bombardment of the target, sputtering out a large number of target atoms, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35
Inventor 李洪锡
Owner 沈阳金纳新材料股份有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More