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Laser peeling method of gallium nitride-based epitaxial film

A gallium nitride-based, laser lift-off technology, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve the problems of low yield of high-power LEDs, achieve low-damage laser lift-off, and reduce radiation The effect of simple area and preparation method

Inactive Publication Date: 2012-01-25
SUZHOU NANOJOIN PHOTONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem of low yield in the preparation of vertical structure high-power LEDs with laser lift-off as the core technology.

Method used

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  • Laser peeling method of gallium nitride-based epitaxial film
  • Laser peeling method of gallium nitride-based epitaxial film
  • Laser peeling method of gallium nitride-based epitaxial film

Examples

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Effect test

Embodiment 1

[0030] See attached Figure 1~6 As shown, a laser lift-off method of a gallium nitride-based epitaxial film comprises the following steps:

[0031] (1) if figure 1 As shown, a gallium nitride-based epitaxial film 2 is grown on a sapphire substrate 1, and then dicing grooves are made by photolithography, etching and other processes to separate and form gallium nitride-based unit devices, and the scribing grooves are scribed to the sapphire substrate The surface of the bottom 1 completely isolates the gallium nitride-based unit device; a p-electrode ohmic contact is formed on the top of the gallium nitride-based epitaxial film 2, and then a mirror is formed, and the mirror is composed of a multilayer film, such as Ti / Ag / Ti / Au, etc.;

[0032] (2) Fill the protective material 3 in the dicing groove to completely isolate the gallium nitride-based epitaxial film 2, and the filled protective material is parallel to or higher than the top of the gallium nitride chip, such as fig...

Embodiment 2

[0038] A laser lift-off method for a gallium nitride-based epitaxial film, comprising the steps of:

[0039] (1) growing GaN-based epitaxial film on sapphire substrate;

[0040] (2) Using glue or paraffin as an intermediate layer, the above-mentioned GaN-based epitaxial film is connected to a glass or Si substrate; the glue is silica gel or epoxy resin;

[0041](3) Shaping the laser spot, processing the spot projected on the interface between the sapphire substrate and the GaN-based epitaxial film into a patterned spot array; the spot diameter of the patterned spot array is 5-200 μm, and the cycle is 10 ~200μm, and its spot energy is flat-top, Gaussian or near-Gaussian distribution;

[0042] (4) irradiating the above-mentioned patterned light spot array through sapphire to the interface between the sapphire substrate and the gallium nitride, so that the gallium nitride at the interface is decomposed, and the gallium nitride-based epitaxial film is separated from the sapphire ...

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Abstract

The invention discloses a laser peeling method of a gallium nitride-based epitaxial film, comprising the following steps: a plurality of layers of gallium nitride-based epitaxial films grow on a sapphire substrate; the layers of gallium nitride-based epitaxial films are isolated by a scribing groove to form a gallium nitride-based unit component; the scribing groove scribes through till the surface of the sapphire substrate; protection materials are filled in the scribing groove; a metal layer is used as an interface layer, the gallium nitride-based epitaxial film is connected to the high heat-conducting and electricity-conducting substrate; laser facula is shaped so that the facula projected at the interface position of the sapphire substrate and the gallium nitride-based epitaxial film is processed to be a graphical facula array which can effectively reduce and restrain the stress of laser shock wave; and by adopting the graphical facula array which irradiates at the interface position of the sapphire substrate and the gallium through the sapphire, the gallium at the interface position is decomposed so that the gallium nitride-based epitaxial film is peeled off the sapphire substrate. The method realizes laser peeling with low damage, greatly reduces the damage of the gallium nitride-based epitaxial film and improves the good product rate of chips.

Description

technical field [0001] The invention relates to a laser lift-off method, in particular to a laser lift-off method for a gallium nitride-based epitaxial film on a sapphire substrate. Background technique [0002] At present, gallium nitride-based LEDs generally use sapphire as a substrate and are fabricated by heteroepitaxy. However, due to the high lattice mismatch and thermal mismatch of the sapphire substrate, and the poor thermal conductivity, the development of high-power GaN-based LEDs has been greatly hindered; at the same time, due to the poor conductivity of sapphire, it also restricts The manufacture and development of high-power GaN-based LEDs with vertical structure of upper and lower electrodes. Therefore, peeling off the GaN-based epitaxial film from the sapphire substrate and further transferring it to a high thermal conductivity substrate becomes the key to making high-power GaN-based LEDs. [0003] Since W.S.Wong et al. used an excimer laser to lift off gal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L31/18C30B29/40C30B25/02C30B33/00
CPCY02P70/50
Inventor 王怀兵孔俊杰杨辉梁秉文
Owner SUZHOU NANOJOIN PHOTONICS
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